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BSM35GD120DN2

Description
IGBT Modules 1200V 35A 3-PHASE
CategoryDiscrete semiconductor    The transistor   
File Size132KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSM35GD120DN2 Overview

IGBT Modules 1200V 35A 3-PHASE

BSM35GD120DN2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XUFM-X17
Contacts17
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X17
Number of components6
Number of terminals17
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)280 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)450 ns
Nominal on time (ton)120 ns
VCEsat-Max3.2 V
Base Number Matches1
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 150 GD 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1ms
T
c
= 55°C
T
c
= 25°C
t
P
= 1ms, T
c
= 55°C
V
CES
I
C,nom.
I
C
I
CRM
600
150
180
300
V
A
A
A
T
c
= 25°C, Transistor
P
tot
570
W
V
GES
+/- 20V
V
I
F
150
A
I
FRM
300
A
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
4.800
A
2
s
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 150A, V
GE
= 15V, T
vj
= 25°C
I
C
= 150A, V
GE
= 15V, T
vj
= 125°C
I
C
= 3,0mA, V
CE
= V
GE
, T
vj
= 25°C
V
CE sat
min.
-
-
V
GE(th)
4,5
typ.
1,95
2,20
5,5
max.
2,45
-
6,5
V
V
V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
C
ies
-
6,5
-
nF
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 600V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
-
-
-
0,6
1
1
-
-
500
-
400
nF
µA
mA
nA
I
CES
I
GES
-
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2000-04-26
revision: 1
1 (8)
BSM 150 GD 60 DLC
2000-02-08
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