EML12 / UML12N
Transistors
General purpose transistor
(isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
Applications
DC / DC converter
Motor driver
External dimensions
(Unit : mm)
EMT5
1.6
0.5
1pin mark
Features
1) Tr : Low V
CE(sat)
Di : Low V
F
2) Small package
1.0
0.5 0.5
(5) (4)
1.6
1.2
(1) (2) (3)
0.22
0.13
Structure
NPN Silicon epitaxial planar transistor
Schottky barrier diode
Each lead has same dimensions
Abbreviated symbol : L12
ROHM : EMT5
The following characteristics apply to both Di1 and Tr2.
UMT5
2.0
1.3
0.65 0.65
0.9
0.7
Equivalent circuit (EML12 / UML12N)
(5)
(4)
(5) (4)
1.25
Di1
Tr2
0.2
0.15
Each lead has same dimensions
(1)
(2)
(3)
Abbreviated symbol : L12
ROHM : UMT5
EIAJ : SC-88A
Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EML12
EMT5
L12
T2R
8000
UML12N
UMT5
L12
TR
3000
Rev.A
0.1Min.
1pin mark
(1) (2) (3)
2.1
1/4
EML12 / UML12N
Transistors
Absolute maximum ratings
(Ta=25°C)
Di1
Parameter
Symbol
I
O
Average revtified forward current
Forward current surge peak (60Hz, 1∞) I
FSM
V
R
Reverse voltage (DC)
Tj
Junction temperature
Limits
200
1
30
125
Unit
mA
A
V
°C
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Limits
60
50
7
150
120
150
Unit
V
V
V
mA
mW
°C
∗
∗
Each terminal mount on a recommended.
Di1 / DTr2
Parameter
Power dissipation
Storage temperature
Symbol
P
d
Tstg
Limits
150
−55
to +125
Unit
mW
°C
∗
∗
Each terminal mount on a recommended.
Electrical characteristics
(Ta=25°C)
Di1
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
−
−
Typ.
0.40
4.0
Max.
0.50
30
Unit
V
µA
Conditions
I
F
=200mA
V
R
=10V
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
60
50
7
−
−
−
180
−
−
−
−
−
−
−
−
−
180
2
−
−
−
0.1
0.1
0.4
390
−
3.5
V
V
V
µA
µA
V
−
MHz
PF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
I
C
/I
B
=50mA/5mA
V
CE
=6V,
I
C
=1mA
V
CE
=12V,
I
E
=−2mA,
f=100MHz
V
CB
=12V,
I
E
=0A,
f=1MHz
Conditions
Rev.A
2/4
EML12 / UML12N
Transistors
Electrical characteristic curves
Di1
1
000
100000
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10
Ta=75℃
1
0.1
0.01
1000
100
10
1
0.1
0.01
Ta=-25℃
Ta=25℃
0.001
0
100
200
300
400
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
500
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
Ta=125℃
10000
10
0
10
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
30
1
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
Tr2
50
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
100
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
80
0.50mA
mA
0.45
A
0m
0.4
0.35mA
0.30mA
10
Ta=25˚C
30µA
27µA
8
24µA
21µA
6
Ta=100˚C
25˚C
−5
5˚C
60
0.25mA
0.20mA
18µA
2
1
15µA
4
40
0.15mA
12µA
9µA
2
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.10mA
20
6µA
0.05mA
3µA
0
0
0
0
0.4
0.8
1.2
1.6
I
B
=0A
2.0
I
B
=0A
4
8
12
16
20
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
Fig.3 Grounded emitter output
characteristics ( II )
500
500
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
Ta=25˚C
Ta=100˚C
V
CE
=5V
0.5
Ta=25˚C
DC CURRENT GAIN : h
FE
200
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
200
25˚C
−55˚C
0.2
100
100
0.1
I
C
/I
B
=50
0.05
50
50
20
10
20
20
0.02
0.01
0.2
10
0.2
0.5
1
2
5
10 20
50 100 200
10
0.2
0.5
1
2
5
10 20
50 100 200
0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
Fig.5 DC current gain vs. collector
current ( II )
Fig.6 Collector-emitter saturation
voltage vs. collector current
Rev.A
3/4
EML12 / UML12N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.5
0.5
Ta=25˚C
I
C
/I
B
=10
0.5
I
C
/I
B
=50
0.2
0.2
0.2
0.1
0.05
0.1
0.05
I
C
/I
B
=50
20
10
0.1
0.05
Ta=100˚C
25˚C
−55˚C
Ta=100˚C
25˚C
−55˚C
0.02
0.02
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
0.01
0.01
0.2
0.5
1
2
5
10
20
50 100 200
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25˚C
V
CE
=6V
20
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
10
Cib
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25˚C
f=32MH
Z
V
CB
=6V
100
200
5
50
100
2
Co
20
b
50
−0.5
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.12 Base-collector time constant vs.
emitter current
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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