Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
TO-220-2L
1
2
1. Cathode
2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
RRM
E
AS
I
F
I
F, Max
I
F,SM
I
F,RM
Ptot
T
J
, T
STG
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ T
C
< 153
o
C
Continuous Rectified Forward Current @ T
C
< 135 °C
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Operating and Storage Temperature Range
T
C
= 25
o
C, 10
μs
T
C
= 150 C, 10
μs
Half-Sine Pulse, t
p
= 8.3 ms
Half-Sine Pulse, t
p
= 8.3 ms
T
C
= 25 C
T
C
= 150 C
o
o
o
(Note 1)
FFSP0665A
650
36
6
8.8
430
415
42
28
65
11
-55 to +175
Unit
V
mJ
A
A
A
A
A
W
W
o
C
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance, Junction to Case, Max.
Ratings
2.3
Unit
o
C/W
Semiconductor Components Industries, LLC, 2017
Sep, 2017, Rev.1.0
1
Publication Order Number:
FFSP0665A/D
FFSP0665A — Silicon Carbide Schottky Diode
Package Marking and Ordering Information
Part Number
FFSP0665A
Top Mark
FFSP0665A
Package
TO-220-2L
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
V
F
Forward Voltage
Parameter
Test Conditions
I
F
= 6 A, T
C
= 25
o
C
I
F
= 6 A, T
C
= 125 C
I
F
= 6 A, T
C
= 175 C
I
R
Q
C
C
Reverse Current
Total Capacitive Charge
Total Capacitance
o
o
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.50
1.6
1.72
-
-
-
22
361
41
32
Max.
1.75
2.0
2.4
200
400
600
-
-
-
-
Unit
V
V
R
= 650 V, T
C
= 25
o
C
o
o
V
R
= 650 V, T
C
= 125 C
V
R
= 650 V, T
C
= 175 C
V = 400 V
V
R
= 1 V, f = 100 kHz
V
R
= 200 V, f = 100 kHz
V
R
= 400 V, f = 100 kHz
μA
nC
pF
Notes:
1: E
AS
of 36 mJ is based on starting T
J
= 25 °C, L = 0.5 mH, I
AS
= 12 A, V = 50 V.
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
6
I
F
, FORWARD CURRENT (A)
Figure 2. Reverse Characteristics
10
-6
I
R
, REVERSE CURRENT (A)
5
4
3
2
T
J
= 175
o
C
10
-7
TJ = 175 oC
10
-8
1
0
0.0
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.5
1.0
1.5
2.0
10
-9
TJ = 125
oC
TJ = 75
oC
TJ = 25
oC
TJ = -55
oC
200
300
400
500
600 650
VF, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Current Derating
100
I
F
, PEAK FORWARD CURRENT (A)
80
60
D = 0.2
D = 0.1
Figure 4. Power Derating
80
P
TOT
, POWER DISSIPATION (W)
60
40
40
D = 0.3
D = 0.5
20
D = 0.7
20
D=1
0
25
50
75
100
125
o
150
175
0
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE
(
C
)
T
C
, CASE TEMPERATURE
(
C
)
www.onsemi.com
2
FFSP0665A — Silicon Carbide Schottky Diode
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
Figure 5. Capacitive Charge vs. Reverse Voltage
30
Q
C
, CAPACITIVE CHARGE (nC)
25
20
15
10
5
0
CAPACITANCE (pF)
0
100
200
300
400
500
600650
Figure 6. Capacitance vs. Reverse Voltage
1000
100
10
0.1
1
10
100
650
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
8
E
C
, CAPACITIVE ENERGY (
μ
J)
6
4
2
0
0
100
200
300
400
500
600650
V
R
, REVERSE VOLTAGE (V)
Figure 8.
Junction-to-Case Transient Thermal Response Curve
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CIRCLE-DESCENDING ORDER
D=0.5
0.2
0.1
P
DM
0.01
0.1
0.05
0.01
0.02
t
1
t
2
NOTES:
Z
θJC
(t) = r(t) x R
θJC
R
θJC
= 2.3
o
C/W
Peak T
J
= P
DM
x Z
θJC
(t) + T
C
Duty Cycle, D = t
1
/ t
2
0.001
-6
10
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
www.onsemi.com
3
FFSP0665A — Silicon Carbide Schottky Diode
Test Circuit and Waveforms
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5mH
www.onsemi.com
4
FFSP0665A — Silicon Carbide Schottky Diode
Mechanical Dimensions
Figure 10. TO-220 2L - TO-220, MOLDED, 2LD
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