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FFSP0665A

Description
Schottky Diodes & Rectifiers SIC TO220 SBD 6A 650V
Categorysemiconductor    Discrete semiconductor   
File Size377KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Schottky Diodes & Rectifiers SIC TO220 SBD 6A 650V

FFSP0665A Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Silicon Carbide Diodes
Mounting StyleThrough Hole
Package / CaseTO-220-2L
If - Forward Current6 A
Vrrm - Repetitive Reverse Voltage650 V
Vf - Forward Voltage1.5 V
Ifsm - Forward Surge Current42 A
ConfigurationSingle
TechnologySiC
Ir - Reverse Current200 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Pd - Power Dissipation65 W
Factory Pack Quantity800
FFSP0665A — Silicon Carbide Schottky Diode
www.onsemi.com
FFSP0665A
Silicon Carbide Schottky Diode
650 V, 6 A
Features
• Max Junction Temperature 175
o
C
• Avalanche Rated 36 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
TO-220-2L
1
2
1. Cathode
2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
RRM
E
AS
I
F
I
F, Max
I
F,SM
I
F,RM
Ptot
T
J
, T
STG
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ T
C
< 153
o
C
Continuous Rectified Forward Current @ T
C
< 135 °C
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Operating and Storage Temperature Range
T
C
= 25
o
C, 10
μs
T
C
= 150 C, 10
μs
Half-Sine Pulse, t
p
= 8.3 ms
Half-Sine Pulse, t
p
= 8.3 ms
T
C
= 25 C
T
C
= 150 C
o
o
o
(Note 1)
FFSP0665A
650
36
6
8.8
430
415
42
28
65
11
-55 to +175
Unit
V
mJ
A
A
A
A
A
W
W
o
C
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance, Junction to Case, Max.
Ratings
2.3
Unit
o
C/W
Semiconductor Components Industries, LLC, 2017
Sep, 2017, Rev.1.0
1
Publication Order Number:
FFSP0665A/D
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