SMDJ10A - SMDJ100A
Taiwan Semiconductor
3000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PK
T
J MAX
Package
VALUE
10 - 100
11.1 - 123
3000
175
UNIT
V
V
W
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● Immunization of sensitive devices in automotive,
telecommunications, consumer electronics, and industrial
equipment from electrostatic discharge (ESD) and transient
voltages induced by load switching and lightning.
Configuration
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case：DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal：Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity：As marked
Weight： 0.29 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms
(1)
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
VALUE
3000
6.5
300
3.5 /5.0
-55 to +175
-55 to +175
UNIT
W
W
A
V
°C
°C
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=100A for Unidirectional only
Junction temperature
Storage temperature
T
STG
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25°C per Fig. 2
2. V
F
=3.5V on SMDJ10A - SMDJ90A devices and V
F
=5.0V on SMDJ100A
Devices for bipolar applications
1. For bidirectional use CA suffix for SMDJ10A – SMDJ64A
2. Electrical characteristics apply in both directions
1
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE (%)
100
P
PPM
, PEAK PULSE POWER, KW
Non-repetitive
pulse waveform
shown in fig.3
10
125
Fig.2 Pulse Derating Curve
100
75
50
1
25
0.1
0.001
0
0
25
50
75
100
125
150
°
0.01
0.1
tp, PULSE WIDTH, (ms)
1
10
175
200
T
A
, AMBIENT TEMPERATURE ( C)
Fig.3 Clamping Power Pulse Waveform
10000
140
120
100
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
td
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Fig.4 Typical Junction Capacitance
CJ, JUNCTION CAPACITANCE (pF)
A
Rise time tr=10μs to 100% of I
PPM
1000
VR=0
100
V
R
-rated
stand-off voltage
f=1.0MHz
Vsig=50mVp-p
10
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
4
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
1000
8.3ms single half sine wave
unidirectional only
100
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version:E1708
Embedded System
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