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DZB11C

Description
9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DZB11C Overview

9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DZB11C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
JESD-30 codeO-PALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage11 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance4.55%
Working test current10 mA
Base Number Matches1
Ordering number :EN653F
DZB6.2 to DZB30
Sillicon Diffused Junction Type
1.0W Zener Diodes
Features
· Plastic molded structure.
· Voltage regulator use.
· Power dissipation:P=1.0W.
· Zener voltage:VZ=6.2 to 30V
Package Dimensions
unit:mm
1083
[DZB6.2 to DZB30]
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Conditions
Ratings
1.0
150
–40 to +150
Unit
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Type No.
Zener Characteristics
Zener Voltage
VZ
[V]
typ
DZB6.2U
6.8C
7.5C
8.2C
9.1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
min
5.60
6.45
7.13
7.79
8.65
9.50
10.50
11.40
12.40
14.30
15.20
17.10
19.00
20.90
22.80
25.70
28.50
max
6.80
7.14
7.81
8.61
9.55
10.50
11.50
12.60
13.60
15.80
16.80
18.90
21.00
23.10
25.20
28.30
31.50
Dynamic
Resistance
[Ω]
max
60
60
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Measured
Current
IZ
[mA]
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
VF
[V]
max
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Forward Voltage Drop
Measured
Current
[A]
IR
[µA]
max
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–2.0
–3.0
–4.5
–4.9
–5.5
–6.0
–7.0
–8.0
–9.0
–10.0
–11.0
–13.0
–14.0
–16.0
–17.0
–19.0
–21.0
Reverse Current
Measured
Voltage
[V]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2

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