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PMN55LN

Description
uTrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size74KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMN55LN Overview

uTrenchMOS logic level FET

PMN55LN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)4.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)10 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
PMN55LN
µTrenchMOS™
logic level FET
M3D302
Rev. 01 — 24 March 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN55LN in SOT457 (TSOP6).
1.2 Features
s
Low on-state resistance in small surface mount package.
1.3 Applications
s
DC-to-DC primary side.
1.4 Quick reference data
s
V
DS
20 V
s
P
tot
1.75 W
s
I
D
4.1 A
s
R
DSon
65 mΩ
2. Pinning information
Table 1:
Pin
1,2,5,6
3
4
Pinning - SOT457 (TSOP6), simplified outline and symbol
Description
drain (d)
gate (g)
source (s)
g
s
6
5
4
d
Simplified outline
Symbol
1
Top view
2
3
MBK092
MBB076
SOT457 (TSOP6)
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