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S8851

Description
MICROWAVE POWER GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size164KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

S8851 Overview

MICROWAVE POWER GaAs FET

S8851 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)0.25 A
FET technologyJUNCTION
highest frequency bandKU BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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