CNY17-1X, CNY17-2X, CNY17-3X, CNY17-4X, CNY17-5X
CNY17-1, CNY17-2, CNY17-3, CNY17-4, CNY17-5
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
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APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
BSI approved - Certificate No. 8001
Dimensions in mm
2.54
7.0
6.0
1.2
7.62
6.62
7.62
4.0
3.0
0.5
3.0
0.5
3.35
0.26
13°
Max
1
2
3
6
5
4
DESCRIPTION
The CNY17-1, CNY17-2, CNY17-3, CNY17-4,
CNY17-5 series of optically coupled isolators
consist of an infrared light emitting diode and a
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High BV
CEO
(70V min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
70V
70V
6V
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
5/2/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91081m-AAS/A5
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
70
70
6
50
MIN TYP MAX UNITS
1.2
1.65
10
V
µ
A
TEST CONDITION
I
F
= 60mA
V
R
= 6V
I
C
= 1mA ( Note 2 )
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
10mA I
F
, 2.5mA
See note 1
V
IO
= 500V (note 1)
V
V
V
nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
CNY17-1
40
CNY17-2
63
CNY17-3
100
CNY17-4
160
CNY17-5
200
CNY17-1
13
CNY17-2
22
CNY17-3
34
CNY17-4
56
CNY17-5
68
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
Input-output Isolation Resistance R
ISO
5x10
10
80
125
200
320
400
0.4
%
%
%
%
%
%
%
%
%
%
V
V
RMS
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
TYPICAL SWITCHING CHARACTERISTICS
1.
Linear Operation
(
without saturation) Fig
1.
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
t
on
t
r
t
off
t
f
F
CO
2.
Switching Operation (with saturation) Fig 2
V
CC
= 5V, R
L
= 1k
Ω
GROUP
Turn-on Time t
on
t
r
Rise Time
Turn-off Time t
off
t
f
Fall Time
V
CESAT
UNITS
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
-1
-4
-2 and -3
(I
F
=20mA) (I
F
=10mA) (I
F
=5mA)
3.0
2.0
18
11
4.2
3.0
23
14
< 0.4
6.0
4.6
25
15
UNITS
µs
µs
µs
µs
V
V
CC
= 5.0V
R
L
= 75Ω
OUTPUT
V
CC
= 5.0V
R
L
= 1kΩ
OUTPUT
INPUT
t
on
t
r
OUTPUT
10%
90%
10%
90%
t
off
t
f
FIG 1
5/2/03
FIG 2
DB91081m-AAS/A5
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17-3 )
50
T
A
= 25°C
150
Collector current I
C
(mA)
40
30
20
10
50
30
20
15
10
100
50
I
F
= 5mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
70
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
1
2
5
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91081m-AAS/A5
V
CE
= 5V
T
A
= 25°C
CNY17-5
CNY17-4
Forward current I
F
(mA)
60
50
40
30
20
10
0
CNY17-3
CNY17-2
CNY17-1
I
F
= 10mA
V
CE
= 5V
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 10mA
I
C
= 2.5mA
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
5/2/03
Microcontroller MCU
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