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PHB146NQ06LT

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size74KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PHB146NQ06LT Overview

N-channel TrenchMOS logic level FET

PHB146NQ06LT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code_compli
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
PHB146NQ06LT
N-channel TrenchMOS™ logic level FET
Rev. 01 — 10 May 2004
Product data
1. Product profile
1.1 Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s
Logic level threshold
s
Low on-state resistance.
1.3 Applications
s
Motors, lamps, solenoids
s
DC-to-DC converters
s
Uninterruptible power supplies
s
General industrial applications.
1.4 Quick reference data
s
V
DS
55 V
s
P
tot
250 W
s
I
D
75 A
s
R
DSon
5.4 mΩ.
2. Pinning information
Table 1:
1
2
3
mb
Pinning - SOT404 (D
2
-PAK), simplified outline and symbol
Simplified outline
[1]
Pin Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
mb
d
g
s
MBB076
2
1
3
MBK116
SOT404 (D
2
-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
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