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TSS42L RW

Description
Schottky Diodes & Rectifiers Schottky 150mW
Categorysemiconductor    Discrete semiconductor   
File Size166KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSS42L RW Overview

Schottky Diodes & Rectifiers Schottky 150mW

TSS42L RW Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / Case1005
If - Forward Current200 mA
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage1 V
Ifsm - Forward Surge Current400 mA
ConfigurationSingle
TechnologySi
Ir - Reverse Current0.5 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingReel
Pd - Power Dissipation200 mW
Factory Pack Quantity4000
trr - Reverse Recovery time5 ns
Vr - Reverse Voltage30 V
TSS42L/TSS43L
Taiwan Semiconductor
Small Signal Product
Surface Mount Schottky
FEATURES
- Designed for mounting on small surface
- Extremely thin / leadless package
- Low capacitance
- Low forward voltage drop
- Packing code with suffix "G" means
green compound (halogen-free)
1005
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 6 mg (approximately)
- Marking code:
TSS42L: BD
TSS43L: BE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rate Load
Power Dissipation
Forward Voltage
TSS42L/43L I
F
= 200 mA
TSS42L
TSS42L
TSS43L
Reverse Leakage Current
TSS43L
V
R
= 25 V
I
F
= 10 mA
I
F
= 50 mA
I
F
= 2 mA
I
F
= 15 mA
I
R
C
J
t
rr
T
J
T
STG
V
F
SYMBOL
V
RRM
V
R
V
R(RMS)
I
O
I
FRM
I
FSM
Pd
VALUE
30
30
21
200
0.5
400
200
1.00
0.40
0.65
0.33
0.45
0.5
10
5
-55 to + 125
-55 to + 125
μA
pF
ns
o
o
UNIT
V
V
V
mA
A
mA
mW
V
Typical Capacitance Between Terminals
( V
R
=1V, f=1.0MHz )
Reverse Recovery Time
( I
F
=I
R
=10mA, Irr=0.1×I
R
, R
L
=100Ω)
Junction Temperature
Storage Temperature
C
C
Document Number: DS_S1411010
Version: C14

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