BUK9907-40ATC
TrenchPLUS logic level FET
Rev. 01 — 28 January 2002
M3D745
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9907-40ATC in SOT263B.
2. Features
s
s
s
s
Typical on-state resistance 5.8 mΩ
Q101 compliant
ESD and overvoltage protection
Monolithically integrated temperature sensor for overload protection.
3. Applications
s
Automotive and power switching:
x
12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
x
Protected drive for lamps.
4. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT263B simplified outline and symbol
Simplified outline
mb
Description
gate (g)
anode (a)
drain (d)
cathode (k)
source (s)
mounting base;
connected to drain (d)
Symbol
d
a
g
MBL306
s
k
1
5
MBL263
SOT263B
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
5. Quick reference data
Table 2:
Quick reference data
Conditions
T
j
= 25
°C;
I
GS(CL)
=
−2
mA; I
D
= 1 A
T
mb
= 25
°C;
V
GS
= 5 V
T
mb
= 25
°C
T
j
= 25
°C;
V
GS
= 5 V; I
D
= 50 A
T
j
= 25
°C;
V
GS
= 4.5 V; I
D
= 50 A
T
j
= 25
°C;
V
GS
= 10 V; I
D
= 50 A
V
F
S
F
temperature sense diode forward
voltage
temperature sense diode temperature
coefficient
T
j
= 25
°C;
I
F
= 250
µA
−55 °C
< T
j
< 175
°C;
I
F
= 250
µA
Typ
50
-
-
-
5.8
6
5.2
658
−1.54
Max
-
140
272
175
7
7.7
6.2
668
−1.68
Unit
V
A
W
°C
mΩ
mΩ
mΩ
mV
mV/K
Symbol Parameter
V
DSR(CL)
drain-source clamping voltage
I
D
P
tot
T
j
R
DSon
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
9397 750 09139
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 28 January 2002
2 of 15
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGS
V
GS
I
D
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 5 V;
Figure 2
I
DM
P
tot
I
DG(CL)
I
GS(CL)
drain current (peak value)
total power dissipation
drain-gate clamping current
gate-source clamping current
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
t
p
= 5 ms;
δ
= 0.01
continuous
t
p
= 5 ms;
δ
= 0.01
V
isol(FET-TSD)
FET to temperature sense diode
isolation voltage
T
stg
T
j
I
DR
I
DRM
Clamping
E
DS(CL)S
non-repetitive drain-source
clamping energy
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 5 V; R
GS
= 10 kΩ;
starting T
j
= 25
°C
Human Body Model; C = 100 pF;
R = 1.5 kΩ
-
1.4
J
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
[2]
[3]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
−55
−55
-
-
-
[1]
[1]
[2]
[3]
[3]
Max
40
40
±15
140
75
75
560
272
50
10
50
±100
+175
+175
140
75
560
Unit
V
V
V
A
A
A
A
W
mA
mA
mA
V
°C
°C
A
A
A
I
DG
= 250
µA
Source-drain diode
Electrostatic Discharge
V
esd
electrostatic discharge voltage;
pins 1,3,5
-
6
kV
[1]
[2]
[3]
Voltage is limited by clamping
Current is limited by power dissipation chip rating
Continuous current is limited by package.
9397 750 09139
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 28 January 2002
3 of 15
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
120
Pder
(%)
100
03na19
150
ID
(A)
125
03ne74
80
100
60
75
Capped at 75 A due to package
40
50
20
25
0
0
25
50
75
100
125
150
175 200
Tmb (ºC)
0
25
50
75
100
125
150
175
200
Tmb (oC)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
5 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
03ne75
RDSon = VDS/ID
tp = 10 µs
102
100 µs
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09139
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 28 January 2002
4 of 15
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
7. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
Conditions
vertical in still air
Figure 4
Min
-
-
Typ
-
-
Max
60
0.55
Unit
K/W
K/W
7.1 Transient thermal impedance
1
Z
th(j-mb)
(K/W)
03ne76
δ
= 0.5
10-1
0.2
0.1
0.05
P
10-2
0.02
δ
=
tp
T
Single Shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09139
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 28 January 2002
5 of 15
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