ICS722
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
Description
The ICS722 is a low cost, low-jitter, high-performance
3.3 volt VCXO designed to replace expensive discrete
VCXOs modules. The on-chip Voltage Controlled
Crystal Oscillator accepts a 0 to 3.3 V input voltage to
cause the output clocks to vary by over ±100 ppm.
Using ICS’ patented VCXO techniques, the device
uses an inexpensive external pullable crystal in the
range of 16.2 to 28 MHz to produce a VCXO output
clock at that same frequency.
The frequency of the on-chip VCXO is adjusted by an
external control voltage input into pin VIN. Because
VIN is a high-impedance input, it can be driven directly
from an PWM RC integrator circuit. Frequency output
increases with VIN voltage input. The usable range of
VIN is 0 to 3.3 V.
ICS manufactures the largest variety of Set-Top Box
and multimedia clock synthesizers for all applications.
Consult ICS to eliminate VCXOs, crystals, and
oscillators from your board.
Features
•
•
•
•
•
•
•
•
Packaged in 8-pin SOIC
Operational frequency range of 16.2 MHz to 28 MHz
Uses an inexpensive external crystal
On-chip patented VCXO with pull range of 230 ppm
(minimum)
VCXO tuning voltage of 0 to 3.3 V
Operating voltage of 3.3 V
12 mA output drive capability at TTL levels
Advanced, low-power, sub-micron CMOS process
Block Diagram
VDD
VIN
X1
16.2-28MHz
Pullable
Crystal X2
Voltage
Controlled
Crystal
Oscillator
16.2-28MHz Clock
(REFOUT)
GND
MDS 722 A
I n t e gra te d C i r c u i t S y s t e m s
●
1
525 Race Stre et, San Jo se, CA 9 5126
●
Revision 121404
te l (40 8) 2 97-12 01
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w w w. i c st . c o m
ICS722
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
Pin Assignment
X1
VDD
VIN
GND
1
2
3
4
8
7
6
5
X2
DC
DC
REFOUT
ICS722
8-Pin (150 mil) SOIC
Pin Descriptions
Pin
Number
1
2
3
4
5
6
7
8
Pin
Name
XI
VDD
VIN
GND
REFOUT
DC
DC
X2
Pin
Type
Input
Power
Input
Power
Output
—
—
Input
Pin Description
Crystal connection. Connect to the external pullable crystal.
Connect to +3.3 V (0.01µf decoupling capacitor recommended).
Voltage input to VCXO. Zero to 3.3 V signal which controls the
VCXO frequency.
Connect to ground.
VCXO CMOS level clock output matches the nominal frequency of
the crystal.
Do not connect anything to this pin.
Do not connect anything to this pin.
Crystal connection. Connect to a external pullable crystal.
MDS 722 A
In te grated Circuit Systems
●
2
525 Ra ce Street, San Jose, CA 9512 6
●
Revision 121404
tel (4 08) 297-1 201
●
w w w. i c s t . c o m
ICS722
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
External Component Selection
The ICS722 requires a minimum number of external
components for proper operation.
variable load capacitors that “pull” (change) the
frequency of the crystal. The crystal specified for use
with the ICS722 is designed to have zero frequency
error when the total of on-chip + stray capacitance is
14 pF.
Recommended Crystal Parameters:
Initial Accuracy at 25
°
C
Temperature Stability
Aging
Load Capacitance
Shunt Capacitance, C0
C0/C1 Ratio
Equivalent Series Resistance
Decoupling Capacitors
A decoupling capacitor of 0.01µF should be connected
between VDD and GND on pins 2 and 4 as close to the
ICS722 as possible. For optimum device performance,
the decoupling capacitor should be mounted on the
component side of the PCB. Avoid the use of vias in the
decoupling circuit.
Series Termination Resistor
When the PCB trace between the clock output and the
load is over 1 inch, series termination should be used.
To series terminate a 50Ω trace (a commonly used
trace impedance), place a 33Ω resistor in series with
the clock line, as close to the clock output pin as
possible. The nominal impedance of the clock output is
20Ω.
±20 ppm
±30 ppm
±20 ppm
14 pf
7 pF Max
250 Max
35
Ω
Max
The external crystal must be connected as close to the
chip as possible and should be on the same side of the
PCB as the ICS722. There should be no via’s between
the crystal pins and the X1 and X2 device pins. There
should be no signal traces underneath or close to the
crystal. See application note MAN05.
Quartz Crystal
The ICS722 VCXO function consists of the external
crystal and the integrated VCXO oscillator circuit. To
assure the best system performance (frequency pull
range) and reliability, a crystal device with the
recommended parameters (shown below) must be
used, and the layout guidelines discussed in the
following section shown must be followed.
The oscillation frequency of a quartz crystal is
determined by its “cut” and by the load capacitors
connected to it. The ICS722 incorporates on-chip
Crystal Tuning Load Capacitors
The crystal traces should include pads for small fixed
capacitors, one between X1 and ground, and another
between X2 and ground. Stuffing of these capacitors
on the PCB is optional. The need for these capacitors is
determined at system prototype evaluation, and is
influenced by the particular crystal used (manufacture
and frequency) and by PCB layout. The typical required
capacitor value is 1 to 4 pF.
The procedure for determining the value of these
capacitors can be found in application note MAN05.
MDS 722 A
In te grated Circuit Systems
●
3
525 Ra ce Street, San Jose, CA 9512 6
●
Revision 121404
tel (4 08) 297-1 201
●
w w w. i c s t . c o m
ICS722
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the ICS722. These ratings, which
are standard values for ICS commercially rated parts, are stress ratings only. Functional operation of the
device at these or any other conditions above those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can
affect product reliability. Electrical parameters are guaranteed only over the recommended operating
temperature range.
Item
Supply Voltage, VDD
All Inputs and Outputs
Ambient Operating Temperature
Storage Temperature
Soldering Temperature
7V
Rating
-0.5 V to VDD+0.5 V
0 to +70°C
-65 to +150°C
260°C
Recommended Operation Conditions
Parameter
Ambient Operating Temperature
Power Supply Voltage (measured in respect to GND)
Reference crystal parameters
Min.
0
+3.15
Typ.
–
Max.
+70
+3.45
Units
°C
V
Refer to page 3
DC Electrical Characteristics
VDD=3.3 V ±5%
, Ambient temperature 0 to +70°C, unless stated otherwise
Parameter
Operating Voltage
Output High Voltage
Output Low Voltage
Output High Voltage (CMOS
Level)
Operating Supply Current
Short Circuit Current
VIN, VCXO Control Voltage
Symbol
VDD
V
OH
V
OL
V
OH
IDD
I
OS
V
IA
Conditions
I
OH
= -12 mA
I
OL
= 12 mA
I
OH
= -4 mA
No load
Min.
3.15
2.4
Typ.
Max.
3.45
0.4
Units
V
V
V
V
VDD-0.4
6
±50
0
3.3
mA
mA
V
MDS 722 A
In te grated Circuit Systems
●
4
525 Ra ce Street, San Jose, CA 9512 6
●
Revision 121404
tel (4 08) 297-1 201
●
w w w. i c s t . c o m
ICS722
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
AC Electrical Characteristics
VDD = 3.3 V ±5%,
Ambient Temperature 0 to +70° C, unless stated otherwise
Parameter
Output Frequency
Crystal Pullability
VCXO Gain
Output Rise Time
Output Fall Time
Output Clock Duty
Cycle
Maximum Output
Jitter, short term
Symbol
F
O
F
P
t
OR
t
OF
t
D
t
J
Conditions
0V< VIN < 3.3 V, Note 1
VIN = VDD/2 + 1 V, Note 1
0.8 to 2.0 V, C
L
=15 pF
2.0 to 0.8 V, C
L
=15 pF
Measured at 1.4 V, C
L
=15 pF
C
L
=15 pF
Min.
16.2
+ 115
Typ.
Max. Units
28
MHz
ppm
ppm/V
1.5
1.5
ns
ns
%
ps
120
40
50
110
60
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
Thermal Characteristics
Parameter
Thermal Resistance Junction to
Ambient
Symbol
θ
JA
θ
JA
θ
JA
θ
JC
Conditions
Still air
1 m/s air flow
3 m/s air flow
Min.
Typ.
150
140
120
40
Max. Units
°C/W
°C/W
°C/W
°C/W
Thermal Resistance Junction to Case
Marking Diagram (ICS722M)
8
5
Marking Diagram (ICS722MLF)
8
5
ICS722M
######
YYWW
1
4
722MLF
######
YYWW
1
4
Notes:
1. ###### is the lot number.
2. YYWW is the last two digits of the year and week that the part was assembled.
3. “LF” denotes Pb (lead) free package.
4. Bottom marking: (origin)
Origin = country of origin if not USA.
MDS 722 A
In te grated Circuit Systems
●
5
525 Ra ce Street, San Jose, CA 9512 6
●
Revision 121404
tel (4 08) 297-1 201
●
w w w. i c s t . c o m