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MA2SP02

Description
Silicon epitaxial planar type For high frequency switch
CategoryDiscrete semiconductor    diode   
File Size39KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA2SP02 Overview

Silicon epitaxial planar type For high frequency switch

MA2SP02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-79
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationSWITCHING
ConfigurationSINGLE
Maximum diode capacitance0.5 pF
Diode component materialsSILICON
Maximum diode forward resistance2 Ω
Diode typePIN DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PIN diodes
MA2SP02
Silicon epitaxial planar type
Unit: mm
For high frequency switch
0.80
+0.05
–0.03
0.80
±0.05
0.60
+0.05
–0.03
0.12
+0.05
–0.02
Low terminal capacitance: C
t
0.5 pF
Low forward dynamic resistance: r
f
2.0
Miniature package and surface mounting type
(0.60)
s
Features
1
(0.80)
(0.60)
0.01
±0.01
2
0.30
±0.05
0
+0
–0.05
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
F
P
D
T
j
T
stg
Rating
60
100
150
150
−55
to
+150
Unit
0.01
±0.01
V
mA
mW
°C
°C
1: Anode
2: Cathode
SSMini2-F1 Package
Marking Symbol: 3P
s
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
Symbol
I
R
V
F
C
t
r
f
V
R
=
60 V
I
F
=
10 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
10 mA, f
=
100 MHz
Conditions
Min
Typ
Max
100
1.0
0.5
2.0
Unit
nA
V
pF
(0.15)
1.20
+0.05
–0.03
1.60
±0.05
Publication date: April 2002
SKL00011AED
1

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