PFM18030F datasheet, PDF - EEWORLD Datasheet

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PFM18030F: Description1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs; File Size487KB，13 Pages; ManufacturerETC

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PFM18030F Overview

1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

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PRELIMINARY

PFM18030

SPECIFICATION

18051880 MHz, 30W, 2Stage Power Module

EnhancementMode Lateral MOSFETs

This versatile DCS module provides excellent linearity and efficiency in a

lowcost surface mount package. The PFM18030SM includes two stages

Package Type: Surface Mount

of amplification, along with internal sense FETs that are on the same

silicon die as the RF devices. These thermally coupled sense FETs

PN: PFM18030SM

simplify the task of bias temperature compensation of the overall amplifier.

The module includes RF input, interstage, and output matching elements.

The source and load impedances required for optimum operation of the

module are much higher (and simpler to realize) than for unmatched Si

LDMOS transistors of similar performance.

The surface mount package base is typically soldered to a conventional

PCB pad with an array of via holes for grounding and thermal sinking of

the module. Optimized internal construction supports low FET channel

temperature for reliable operation.

Package Type: Flange

PN: PFM18030F

29 dB Gain

30 Watts Peak Output Power

Internal Tracking FETs

(for improved bias control)

IS95 CDMA Performance

5 Watts Average Output Level

20% Power Added Efficiency

–49 dBc ACPR

Module Schematic Diagram

Module Substrate

Q1 Die Carrier

Q2 Die Carrier

Drain 2

RF OUT

Output

Match

Lead

Gate 1

RF IN

Lead

Input

Match

Output

Match

Input

Match

Sense S1

Lead

Gate 2

Lead

Sense S2

Lead

Note: Additionally, there are 250 KOhm resistors connected in shunt with all leads, to enhance ESD protection.

Page 1 of 13

Specifications subject to change without notice. U.S. Patent No. 6,822,321

http://www.cree.com/

Rev. 3

PFM18030F Related Products

	PFM18030F	PFM18030	PFM18030SM
Description	1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs	1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs	1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

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