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PHB71NQ03LT

Description
75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Categorysemiconductor    Discrete semiconductor   
File Size90KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

PHB71NQ03LT Overview

75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

PHB71NQ03LT Parametric

Parameter NameAttribute value
Minimum breakdown voltage30 V
Number of terminals2
Processing package descriptionPLASTIC, SC-63, DPAK-3
each_compliYes
EU RoHS regulationsYes
stateActive
Shell connectionDRAIN
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_75 A
Maximum leakage current75 A
Maximum drain on-resistance0.0152 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-252
jesd_30_codeR-PSSO-G2
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature175 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_120 W
Maximum leakage current pulse240 A
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Powe
surface mountYES
terminal coatingTIN
Terminal formGULL WING
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureLOGIC LEVEL COMPATIBLE
PHP/PHB/PHD71NQ03LT
TrenchMOS™ logic level FET
Rev. 01 — 25 June 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP71NQ03LT in SOT78 (TO-220AB)
PHB71NQ03LT in SOT404 (D
2
-PAK)
PHD71NQ03LT in SOT428 (D-PAK).
1.2 Features
s
Logic level compatible
s
Low gate charge
1.3 Applications
s
DC to DC converters
s
Switched mode power supplies
1.4 Quick reference data
s
V
DS
= 30 V
s
P
tot
= 120 W
s
I
D
= 75 A
s
R
DSon
10 mΩ
2. Pinning information
Table 1:
1
2
3
mb
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Simplified outline
[1]
mb
mb
mb
Pin Description
gate (g)
drain (d)
source (s)
mounting base,
connected to drain (d)
Symbol
d
g
s
2
2
1
MBK106
MBB076
1
3
MBK116
3
MBK091
Top view
1 2 3
SOT78 (TO-220)
[1]
SOT404 (D
2
-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

PHB71NQ03LT Related Products

PHB71NQ03LT PHD71NQ03LT PHP71NQ03LT
Description 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Maximum operating temperature 175 Cel 175 °C 175 °C
surface mount YES YES NO
Is it Rohs certified? - conform to conform to
Maker - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code - not_compliant unknow
Configuration - Single Single
Maximum drain current (Abs) (ID) - 75 A 75 A
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 120 W 120 W
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