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HL6312G

Description
635 nm, LASER DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size27KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HL6312G Overview

635 nm, LASER DIODE

HL6312G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
package instructionLD/G2, 3 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current0.085 A
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature50 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power5 mW
peak wavelength635 nm
Semiconductor materialAlGaInP
shapeROUND
size2 mm
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum threshold current70 mA
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW)
structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code
readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package
achieves high reliability.
Features
Visible light output:
λp
= 635 nm Typ (nearly equal to He-Ne Gas Laser)
Optical output power: 5 mW CW
Low Operating voltage: 2.7 V Max
Single longitudinal mode
Built-in photodiode for monitoring laser output
99

HL6312G Related Products

HL6312G HL6313G
Description 635 nm, LASER DIODE 635 nm, LASER DIODE
Is it Rohs certified? incompatible incompatible
Maker Hitachi (Renesas ) Hitachi (Renesas )
package instruction LD/G2, 3 PIN LD/G2, 3 PIN
Reach Compliance Code unknow unknow
Configuration SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current 0.085 A 0.085 A
JESD-609 code e0 e0
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1
Maximum operating temperature 50 °C 50 °C
Minimum operating temperature -10 °C -10 °C
Optoelectronic device types LASER DIODE LASER DIODE
Nominal output power 5 mW 5 mW
peak wavelength 635 nm 635 nm
Semiconductor material AlGaInP AlGaInP
shape ROUND ROUND
size 2 mm 2 mm
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum threshold current 70 mA 70 mA

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