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PH8230E

Description
N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET
CategoryDiscrete semiconductor    The transistor   
File Size72KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PH8230E Overview

N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

PH8230E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)67 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)62.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
PH8230E
N-channel TrenchMOS™ enhanced logic level FET
M3D748
Rev. 03 — 02 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Low thermal resistance
s
Low gate drive
s
SO8 equivalent area footprint
s
Low on-state resistance.
1.3 Applications
s
DC-to-DC converters
s
Portable appliances
s
Switched-mode power supplies
s
Notebook computers.
1.4 Quick reference data
s
V
DS
30 V
s
P
tot
62.5 W
s
I
D
67 A
s
R
DSon
8.2 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
source (s)
mb
d
Simplified outline
Symbol
gate (g)
mounting base;
connected to drain (d)
g
s
MBB076
1
2
3
4
MBL286
Top view
SOT669 (LFPAK)

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