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NSVBC124EPDXV6T1G

Description
Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR
Categorysemiconductor    Discrete semiconductor   
File Size103KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NSVBC124EPDXV6T1G Overview

Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR

NSVBC124EPDXV6T1G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
ConfigurationDual
Transistor PolarityNPN, PNP
Typical Input Resistor22 kOhms
Typical Resistor Ratio1:1
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
DC Collector/Base Gain hfe Min100
Collector- Emitter Voltage VCEO Max50 VDC
Continuous Collector Current100 mA
Pd - Power Dissipation500 mW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Output Voltage0.2 VDC
QualificationAEC-Q100
Factory Pack Quantity8000
MUN5312DW1,
NSBC124EPDXV6,
NSBC124EPDP6
Complementary Bias
Resistor Transistors
R1 = 22 kW, R2 = 22 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
R
1
(5)
(6)
www.onsemi.com
PIN CONNECTIONS
(2)
(1)
R
2
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
(4)
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
1
12 MG
G
SOT−563
CASE 463A
1
12 M
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−963
CASE 527AD
1
12/R
M
G
M
ORDERING INFORMATION
Device
MUN5312DW1T1G,
SMUN5312DW1T1G*
NSVMUN5312DW1T3G*
MUN5312DW1T2G,
NSVMUN5312DW1T2G*
NSBC124EPDXV6T1G,
NSVBC124EPDXV6T1G*
NSBC124EPDXV6T5G
NSBC124EPDP6T5G
Package
SOT−363
SOT−363
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
4,000 / Tape & Reel
8,000 / Tape & Reel
8,000 / Tape & Reel
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
R
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
October, 2017 − Rev. 5
Publication Order Number:
DTC124EP/D

NSVBC124EPDXV6T1G Related Products

NSVBC124EPDXV6T1G NSVMUN5312DW1T2G NSBC124EPDXV6T1G
Description Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Configuration Dual SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Brand Name - ON Semiconductor ON Semiconductor
Is it lead-free? - Lead free Lead free
package instruction - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-F6
Manufacturer packaging code - 419B-02 463A-01
Reach Compliance Code - compliant compliant
Factory Lead Time - 8 weeks 1 week
Is Samacsys - N N
Other features - BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V
Minimum DC current gain (hFE) - 60 60
JESD-30 code - R-PDSO-G6 R-PDSO-F6
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 2 2
Number of terminals - 6 6
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260
Polarity/channel type - NPN AND PNP NPN AND PNP
Maximum power dissipation(Abs) - 0.385 W 0.5 W
surface mount - YES YES
Terminal surface - Tin (Sn) Tin (Sn)
Terminal form - GULL WING FLAT
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED 40
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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