HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3503M04
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
<R>
NF = 0.45 dB TYP., G
a
= 12.0 dB TYP. @ V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
• Gate width: W
g
= 160
m
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3503M04
NE3503M04-T2
NE3503M04-T2B
Order Number
NE3503M04-A
NE3503M04-T2-A
NE3503M04-T2B-A
Package
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
15 kpcs/reel
Quantity
50 pcs (Non reel)
3 kpcs/reel
Marking
V75
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
3.0
I
DSS
80
125
+125
65
to +125
Unit
V
V
mA
A
mW
C
C
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10456EJ03V0DS (3rd edition)
Date Published January 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE3503M04
RECOMMENDED OPERATING CONDITIONS (T
A
= +25C)
Parameter
Symbol
V
DS
I
D
P
in
MIN.
1
5
TYP.
2
10
MAX.
3
15
0
Unit
V
mA
dBm
<R>
<R>
Drain to Source Voltage
Drain Current
Input Power
ELECTRICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
Test Conditions
V
GS
=
3.0
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
MIN.
25
0.2
40
11.0
TYP.
0.5
40
0.7
55
0.45
12.0
MAX.
10
70
1.5
0.65
Unit
A
mA
V
mS
dB
dB
<R>
<R>
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
<R>
<R>
Noise Figure
Associated Gain
2
Data Sheet PG10456EJ03V0DS
NE3503M04
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10456EJ03V0DS
3
Analog electronics
京公网安备 11010802033920号
EEWORLD
