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S1BHE2G

Description
Rectifiers 1A, 100V, GLASS PASSIVATED SMD RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size356KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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Rectifiers 1A, 100V, GLASS PASSIVATED SMD RECTIFIER

S1BHE2G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseDO-214AC-2
Vr - Reverse Voltage100 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.1 V
Max Surge Current40 A
Ir - Reverse Current1 uA
Recovery Time1.5 us
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
ProductRectifiers
Factory Pack Quantity7500
Unit Weight0.002116 oz
S1A - S1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Non-repetitive peak reverse avalanche
energy at 25°C, I
AS
=1A, L=10mH
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
E
RSM
R
θJL
R
θJA
T
J
T
STG
27
75
- 55 to +175
- 55 to +175
40
1.1
1
50
1.5
12
5
30
85
S1A
50
35
50
S1B
100
70
100
S1D
200
140
200
S1G
400
280
400
1
30
S1J
600
420
600
S1K S1M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
mJ
°C/W
°C
°C
Document Number: DS_D1411068
Version: R15

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