2N5397 datasheet, PDF - EEWORLD Datasheet

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2N5397: DescriptionJFET N-Ch -25V JFET 10mA 300mW 10mA 1.7mW; CategoryDiscrete semiconductor The transistor; File Size117KB，1 Pages; ManufacturerInterFET; Websitehttp://www.interfet.com/

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2N5397 Overview

JFET N-Ch -25V JFET 10mA 300mW 10mA 1.7mW

2N5397 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown
Other features	LOW NOISE
Configuration	SINGLE
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	1.2 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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8/2014

B40

2N5397, 2N5398

N-Channel Silicon Junction Field-Effect Transistor

·

VHF Amplifiers

Oscillators

Mixers

Low-Noise, High Power Gain

High Transconductance

2N5397

Min Max

V

(BR)GSS

I

GSS

V

GS(OFF)

V

GS(F)

I

DSS

10

5.5

6

-1

-25

-0.1

-6

1

30

9

10

0.4

0.2

2

5

1.2

Reverse Gate Source & Gate Drain Voltage

-25V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

300 mW

Power Derating

1.7 mW/

o

C

Operating Temperature Range

-55°C to +125°C

Storage Temperature Range

-65

o

C to +150

o

C

Absolute maximum ratings at T

A

= 25

o

C

At 25

o

C free air temperature

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

Gate Source Cutoff Voltage

Gate Source Forward Voltage

Drain Saturation Current (pulsed)

2N5398

Min Max

-25

-0.1

-1

-6

1

5

5.5

40

10

0.5

0.4

3

5.5

1.3

Unit

V

nA

uA

V

mA

Process NJ26L

Test Conditions

I

G

= -1 uA,

V

DS

= 0 V

V

GS

= -15 V,

V

DS

= 0 V

V

DS

= 10 V,

I

D

= 1 nA

V

DS

= 0 V,

I

G

= 1 mA

V

DS

= 10 V,

V

GS

= 0 V

V

DG

= 10 V,

I

D

= 10 mA

V

DS

= 10 V,

I

D

= 10 mA

V

DG

= 10 V,

I

D

= 10 mA

V

DS

= 10 V,

I

D

= 10 mA

V

DG

= 10 V,

I

D

= 10 mA

V

DG

= 15 V,

V

GS

= 0 V

V

DG

= 15 V,

V

GS

= 0 V

150°C

Dynamic Electrical Characteristics

Common-Source Forward

g

fs

Transconductance

Common-Source Forward

│Y

fs

│

Transfer Admittance

Common-Source Output

│g

os

│

Conductance

Common-Source Input

│Y

is

│

Admitance

Common-Source Input

g

is

Conductance

Common-Source Input

C

iss

Capacitance

Common-Source Reverse

C

rss

Transfer Capacitance

mS

pF

f = 450

MHz

f=1

kHz

f = 450

MHz

f=1

kHz

f = 450

MHz

f=1

MHz

f=1

MHz

Dimensions in

Inches (mm)

SOT-23

: SMP5397, SMP5398

1-Source, 2-Drain, 3-Gate

TO-72:

2N5397, 2N5398

1-Source, 2-Drain, 3-Gate, 4- Case

715 N. Glenville Dr., Ste. 400

Richardson, TX 75081

(972) 238-9700 Fax (972) 238-5338

www.interfet.com

2N5397 Related Products

	2N5397	2N5398
Description	JFET N-Ch -25V JFET 10mA 300mW 10mA 1.7mW	JFET N-Ch -25V JFET 10mA 300mW 10mA 1.7mW
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown	unknown
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
FET technology	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	1.2 pF	1.3 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-72	TO-72
JESD-30 code	O-MBCY-W4	O-MBCY-W4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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