Ordering number : ENN7671
2SK3738
N-Channel Junction Silicon FET
2SK3738
Impedance Converter Applications
Application
•
•
Package Dimensions
unit : mm
2124
[2SK3738]
0.75
0.6
0.4 0.8 0.4
1.6
Impedance conversion.
Infrared sensor.
Features
•
•
•
Small IGSS.
Small Ciss.
Ultrasmall package permitting applied sets to be
small and slim.
0.3
3
0~0.1
1
2
0.5 0.5
1.6
0.2
0.1
0.1max
1 : Source
2 : Drain
3 : Gate
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
SANYO : SMCP
Ratings
40
--40
10
1
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
Conditions
IG=-
-10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=1µA
VDS=10V, VGS=0
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
Ratings
min
--40
--500
--1.5
50
0.06
0.13
1.7
0.7
--2.3
130
typ
max
Unit
V
pA
V
µA
mS
pF
pF
Marking : KB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42004GB TS IM TA-100829 No.7671-1/3
2SK3738
140
ID -- VDS
140
ID -- VDS
120
120
Drain Current, ID --
µA
100
V GS=0
--0.2V
Drain Current, ID --
µA
100
VGS=0
--0.2V
80
80
60
--0.4V
60
--0.4V
40
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
0
1
2
3
4
5
ITR00837
80
70
60
--0.6V
40
20
0
20
0
0
4
8
--0.8V
--1.0V
--1.2V
12
--1.4V
16
20
ITR00838
160
140
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VGS
ID -- VGS
VDS=10V
IDSS=100µA
VDS=10V
IDSS=50µA
Drain Current, ID --
µA
--2
5
50
40
100
80
25
°
C
Ta
=
20
10
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
Ta
=
30
75
°
C
0
ITR00840
2
IT06669
5
7
IT06671
75
25
°
C
°
C
60
40
20
0
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
Gate-to-Source Voltage, VGS -- V
3
ITR00839
3
Gate-to-Source Voltage, VGS -- V
VGS(off) -- IDSS
Forward Transfer Admittance,
y
fs -- mS
y
fs -- IDSS
VDS=10V
ID=1
µ
A
Cutoff Voltage, VGS(off) -- V
VDS=10V
VGS=0
f=1kHz
2
2
--1.0
0.1
7
7
5
3
5
7
100
2
3
IT06668
5
3
5
7
100
Drain Current, IDSS --
µA
120
PD -- Ta
Drain Current, IDSS --
µA
10
7
Ciss -- VDS
Allowable Power Dissipation, PD -- mW
VGS=0
f=1MHz
Input Capacitance, Ciss -- pF
100
5
80
3
2
60
40
1.0
7
5
3
1.0
20
0
0
20
40
60
80
100
120
140
160
2
3
5
7
Ambient Temperature, Ta --
°C
10
2
3
IT06670
Drain-to-Source Voltage, VDS -- V
No.7671-2/3
Drain Current, ID --
µA
120
--2
5
°
C
°
C
2SK3738
5
Crss -- VDS
VGS=0
f=1MHz
Reverse Transfer Capacitance, Crss -- pF
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
2
3
5
7
Drain-to-Source Voltage, VDS -- V
IT06672
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.
PS No.7671-3/3