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2SK3738

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size22KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK3738 Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN

2SK3738 Parametric

Parameter NameAttribute value
Objectid2063792673
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Ordering number : ENN7671
2SK3738
N-Channel Junction Silicon FET
2SK3738
Impedance Converter Applications
Application
Package Dimensions
unit : mm
2124
[2SK3738]
0.75
0.6
0.4 0.8 0.4
1.6
Impedance conversion.
Infrared sensor.
Features
Small IGSS.
Small Ciss.
Ultrasmall package permitting applied sets to be
small and slim.
0.3
3
0~0.1
1
2
0.5 0.5
1.6
0.2
0.1
0.1max
1 : Source
2 : Drain
3 : Gate
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
SANYO : SMCP
Ratings
40
--40
10
1
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
Conditions
IG=-
-10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=1µA
VDS=10V, VGS=0
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
Ratings
min
--40
--500
--1.5
50
0.06
0.13
1.7
0.7
--2.3
130
typ
max
Unit
V
pA
V
µA
mS
pF
pF
Marking : KB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42004GB TS IM TA-100829 No.7671-1/3

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