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2SK3737

Description
Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size31KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK3737 Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MCP, 3 PIN

2SK3737 Parametric

Parameter NameAttribute value
Objectid2080532105
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Ordering number : ENN8390
2SK3737
2SK3737
Features
N-Channel Silicon MOSFET
FM Tuner, VHF Amplifier Applications
Low noise.
High power gain.
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tch
Tstg
Conditions
Ratings
15
±5
30
150
150
--55 to +150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Symbol
VDSX
IGSS
IDSS
VGS(off)
yfs
Ciss
Crss
PG
NF
Conditions
VGS=--4V, ID=100µA
VDS=0V, VGS=±5V
VDS=10V, VGS=0V
VDS=10V, ID=100µA
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=100MHz
See specified Test Circuit.
VDS=10V, VGS=0V, f=100MHz
See specified Test Circuit.
Ratings
min
15
±10
6.0*
11
16
2.4
0.035
35
2.0
12*
--2.2
typ
max
Unit
V
nA
mA
V
mS
pF
pF
dB
dB
Marking : KA
*
: The 2SK3737 is classified by IDSS as follows (unit : mA) :
Rank
5
6
IDSS
6 to 10
8 to 12
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71505AD MS IM TB-00001592 No.8390-1/4
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