Ordering number : ENN8283
2SK3746
2SK3746
Features
•
•
•
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
1500
±20
2
4
2.5
110
150
--55 to +150
42
2
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1
VDD=99V, L=20mH, IAV=2A
*2
L≤20mH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Conditions
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=1A
ID=1A, VGS=10V
Ratings
min
1500
100
±10
2.5
0.7
1.4
10
13
3.5
typ
max
Unit
V
µ
A
µ
A
V
S
Ω
Marking : K3746
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005QB MS IM TB-00001345 No.8283-1/4
2SK3746
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=2A
VDS=200V, VGS=10V, ID=2A
VDS=200V, VGS=10V, ID=2A
IS=2A, VGS=0V
Ratings
min
typ
380
70
40
12
37
152
59
37.5
2.7
20
0.88
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Package Dimensions
unit : mm
7503-004
15.6
14.0
2.6
3.5
4.8
3.2
2.0
1.6
2.0
20.0
1.3
15.0
20.0
1.2
1.0
0.6
1
2 3
0.6
1.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
5.45
5.45
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=1A
RL=200Ω
VDD=200V
Avalanche Resistance Test Circuit
≥50Ω
RG
L
D
PW=10µs
D.C.≤0.5%
VOUT
2SK3746
10V
0V
50Ω
VDD
G
2SK3746
P.G
RGS=50Ω
S
No.8283-2/4
2SK3746
4.0
3.5
3.0
2.5
Tc=25
°
C
pulse
ID -- VDS
8V
3.0
ID -- VGS
VDS=20V
pulse
2.5
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
10V
2.0
6V
2.0
1.5
1.0
0.5
25
°
C
75
°
C
1.5
1.0
5V
VGS=4V
0.5
0
0
5
10
15
20
25
30
35
40
45
50
0
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, VDS -- V
30
IT09031
30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT09032
RDS(on) -- Tc
ID=1A
ID=1A
VGS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
25
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
18
20
25
20
20
15
Tc=75°C
25
°
C
--25
°
C
15
10
10
5
5
0
0
2
4
6
8
10
12
14
16
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
5
y
fs -- ID
IT09033
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Case Temperature, Tc --
°C
IT09034
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
VDS=20V
3
2
25
1.0
7
5
3
2
°
C
5
°
C
--2
=
°
C
Tc
75
Source Current, IS -- A
5
°
C
0.4
0.1
3
5
7
0.1
2
3
5
7
1.0
2
3
0.01
0.2
Tc=
7
0.6
--25
°
C
0.8
25
°
C
1.0
1.2
IT09036
Drain Current, ID -- A
5
3
IT09035
5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
td(off)
3
2
1000
7
5
3
2
100
7
5
3
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
100
7
5
3
2
Ciss
tf
Co
ss
Crss
tr
td(on)
10
0.1
2
3
5
7
1.0
2
3
2
10
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
IT09037
Drain-to-Source Voltage, VDS -- V
IT09038
No.8283-3/4
2SK3746
10
9
VGS -- Qg
VDS=200V
ID=2A
Drain Current, ID -- A
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=4A
ID=2A
1m
<10µs
Gate-to-Source Voltage, VGS -- V
10
s
8
7
6
5
4
3
2
1
0
0
10
20
30
40
IT09039
0
µ
s
10
10
m
0m
s
D
C
s
n
io
at
er
op
Operation in this area
is limited by RDS(on).
0.01
1.0
Tc=25
°
C
Single pulse
2 3
5 7 10
2 3
5 7 100
2 3
Total Gate Charge, Qg -- nC
3.0
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
120
110
100
5 71000 2 3
IT09040
PD -- Tc
Allowable Power Dissipation, PD -- W
2.5
2.0
80
1.5
60
1.0
40
0.5
20
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT09041
Case Temperature, Tc --
°C
IT09042
Note on usage : Since the 2SK3746 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.8283-4/4
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