Ordering number : ENN8193
2SK3850
N-Channel Silicon MOSFET
2SK3850
Features
•
•
•
General-Purpose Switching Device
Applications
Best suited for motor drive.
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
600
±30
0.7
2.8
1.0
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=600V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.35A
VGS=10V, ID=0.35A
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
min
600
100
±100
2.5
280
560
14
96
29
16
18.5
3.5
typ
max
Unit
V
µA
nA
V
mS
Ω
pF
pF
pF
Marking :K3850
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PB TS IM TA-101202 No.8193-1/4
2SK3850
Tc= --25
°
C
0.50
0.45
0.40
ID -- VDS
8V
10
V
0.50
ID -- VGS
VDS=10V
C
75
°
Drain Current, ID -- A
Drain Current, ID -- A
6V
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
1
2
3
4
5
6
7
8
9
10
0.35
0.30
0.25
0.20
C
0.15
0.10
0.05
0
0
1
2
3
Tc=7
5
°
VGS=4V
4
25
°
C
5
--25
°
C
25
6
0.40
°
C
5V
0.45
7
IT08303
Drain-to-Source Voltage, VDS -- V
30
IT08302
30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Tc=25°C
ID=0.35A
25
25
20
20
15
.35
=0
ID
A,
V
0
=1
S
G
V
15
10
10
5
5
2
4
6
8
10
12
14
16
IT09151
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
1.0
y
fs -- ID
Case Temperature, Tc --
°C
1.0
IT09152
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
VDS=10V
7
5
7
5
Forward Current, IF -- A
25
°
C
3
2
3
2
C
5
°
--2
=
°
C
Tc
75
0.1
7
7
5
3
2
3
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1000
7
5
1.0
IT08306
7
0.01
0.4
0.5
Tc=
7
0.6
25
°
0.7
0.1
5
--25
°
C
0.8
5
°
C
C
0.9
1.0
IT09153
SW Time -- ID
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
2
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
0.01
2
3
5
7
100
7
5
3
2
Ciss
tf
Coss
td (o
ff)
tr
td(on)
0.1
2
3
5
1.0
IT09154
7
Crss
10
7
5
0
5
10
15
20
25
30
IT08309
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No.8193-3/4
2SK3850
10
9
VGS -- Qg
VDS=200V
ID=0.25A
Drain Current, ID -- A
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias A S O
IDP=2.8A
10
<10µs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
µ
s
ID=0.7A
DC
op
1m
s
10
ms
0m
s
10
er
ati
on
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 10
2
3
5 7 100
2
3
0.01
1.0
Total Gate Charge, Qg -- nC
1.2
IT08310
20
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 1000
IT09138
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
15
0.8
0.6
10
0.4
5
0.2
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT09139
Case Temperature, Tc --
°C
IT09140
Note on usage : Since the 2SK3850 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS No.8193-4/4
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EEWORLD
