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IRH8150

Description
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
CategoryDiscrete semiconductor    The transistor   
File Size274KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRH8150 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)

IRH8150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeBFM
package instructionFLANGE MOUNT, O-CBFM-P2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)34 A
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.076 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-CBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)235 ns
Base Number Matches1
PD - 90677D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204)
Product Summary
Part Number
IRH7150
IRH3150
IRH4150
IRH8150
Radiation Level R
DS(on)
100K Rads (Si) 0.065Ω
300K Rads (Si) 0.065Ω
600K Rads (Si) 0.065Ω
1000K Rads (Si) 0.065Ω
HEXFET
®
I
D
34A
34A
34A
34A
IRH7150
100V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
®
TO-204AE
International Rectifier’s RADHard
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
g
www.irf.com
1
03/21/01

IRH8150 Related Products

IRH8150 IRH3150 IRH4150 IRH7150
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Parts packaging code BFM BFM BFM BFM
package instruction FLANGE MOUNT, O-CBFM-P2 FLANGE MOUNT, O-CBFM-P2 FLANGE MOUNT, O-CBFM-P2 FLANGE MOUNT, O-CBFM-P2
Contacts 2 2 2 2
Reach Compliance Code compliant compli unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (ID) 34 A 34 A 34 A 34 A
Maximum drain-source on-resistance 0.076 Ω 0.076 Ω 0.076 Ω 0.076 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-204AE TO-204AE TO-204AE TO-204AE
JESD-30 code O-CBFM-P2 O-CBFM-P2 O-CBFM-P2 O-CBFM-P2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 136 A 136 A 136 A 136 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum operating temperature 150 °C 150 °C 150 °C -
Base Number Matches 1 1 - 1
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