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2N2906

Description
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
CategoryDiscrete semiconductor    The transistor   
File Size595KB,3 Pages
ManufacturerCentral Semiconductor
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2N2906 Overview

Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W

2N2906 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns
Base Number Matches1
2N2906
2N2907
2N2906A
2N2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
2N2906
2N2907
60
40
2N2906A
2N2907A
60
60
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
5.0
600
400
1.8
-65 to +200
438
97
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
-
20
ICBO
VCB=50V, TA=150°C
-
20
ICEV
VCE=30V, VEB=0.5V
-
50
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
ton
toff
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCC=30V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
60
40
5.0
-
-
-
-
200
-
-
-
-
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
2N2906A
2N2907A
MIN
MAX
-
10
-
-
60
60
5.0
-
-
-
-
200
-
-
-
-
10
50
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
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