DMJ70H1D4SV3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
700V
R
DS(ON) Max
1.5Ω @ V
GS
= 10V
I
D
T
C
= +25°
C
5.0A
Features and Benefits
Low On-Resistance
High BV
DSS
Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Case: TO251 (Type HE1)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.33 grams (Approximate)
Adaptor
LCD & PDP TV
Lighting
TO251 (Type HE1)
G
Top View
Bottom View
D
S
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMJ70H1D4SV3
Notes:
Case
TO251 (Type HE1)
Packaging
75 Pieces / Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO251 (Type HE1)
5N70SV
YYWW
= Manufacturer’s Marking
5N70SV = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMJ70H1D4SV3
Document number: DS39417 Rev. 3 - 2
1 of 6
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April 2017
© Diodes Incorporated
DMJ70H1D4SV3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
L = 60mH
L = 60mH
I
AS
E
AS
dv/dt
Value
700
±30
5.0
3.2
3.5
6.0
0.5
7.5
6
Unit
V
V
A
A
A
A
mJ
V/ns
NEW PRODUCT
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt
(Note 7)
Thermal Characteristics
Total Power Dissipation (Note 5)
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
T
C
= +25°
C
T
C
= +100°
C
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
78
31
78
1.8
-55 to +150
Unit
W
°
C/W
°
C
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
t
RR
Q
RR
Q
RR
Min
700
2
Typ
3.4
1.2
0.85
342
65
0.5
4.1
7.5
1.7
3.0
8
9
22
5
178
223
1.3
1.8
Max
1
100
4
1.5
1.3
nC
pF
Ω
Unit
V
µA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 700V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 0V, I
S
=1A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time (T
J
= +150°
C)
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge (T
J
= +150°
C)
Notes:
V
DS
= 50V, f = 1MHz,
V
GS
= 0V
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 560V, I
D
= 3.2A,
V
GS
= 10V
ns
V
DD
= 350V, V
GS
= 10V,
R
G
= 4.7Ω, I
D
= 3.2A
ns
ns
µC
µC
I
S
= 3.2A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMJ70H1D4SV3
Document number: DS39417 Rev. 3 - 2
2 of 6
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April 2017
© Diodes Incorporated
DMJ70H1D4SV3
5.0
V
GS
= 10V
V
GS
= 8.0V
4.0
I
D
, DRAIN CURRENT (A)
V
GS
= 7.0V
I
D
, DRAIN CURRENT (A)
V
GS
= 6.0V
3.0
V
GS
= 5.0V
2
1.5
1
T
J
= 150℃
0.5
T
J
= 125℃
0
0
1
2
3
4
5
6
7
8
9
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1
2
3
4
5
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
V
GS
= 10V
5
10
0
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
8
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
2.5
3
V
DS
= 10V
NEW PRODUCT
2.0
V
GS
= 4.5V
1.0
V
GS
= 4.0V
0.0
4
3
I
D
= 1.0A
2
1
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
5
V
GS
=10V
4
T
J
= 125℃
3
T
J
= 85℃
2
T
J
= 25℃
1
T
J
= -55℃
T
J
= 150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
3
2.5
2
V
GS
= 10V, I
D
= 1.0A
1.5
1
0.5
0
0
0
2
3
4
5
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
1
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMJ70H1D4SV3
Document number: DS39417 Rev. 3 - 2
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April 2017
© Diodes Incorporated
DMJ70H1D4SV3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
= 10V, I
D
= 1.0A
5
4
I
D
= 1mA
3
I
D
= 250μA
2
NEW PRODUCT
1
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
10
C
T
, JUNCTION CAPACITANCE (pF)
9
I
S
, SOURCE CURRENT (A)
8
7
6
5
4
3
2
1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
T
J
= 150℃
T
J
= 125℃
V
GS
= 0V
10000
f=1MHz
1000
C
iss
100
C
oss
10
1
C
rss
0
0
20
40 60 80 100 120 140 160 180 200
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
9
10
R
DS(ON)
LIMITED
7
V
GS
(V)
6
5
4
3
2
1
0
0
I
D
, DRAIN CURRENT (A)
8
V
DS
= 560V, I
D
= 3.2A
1
P
W
=10µs
P
W
=100µs
P
W
=1ms
P
W
=10ms
0.1
T
J(MAX)
=150℃
T
C
=25℃
Single Pulse
DUT on infinite
heatsink
V
GS
=10V
1
P
W
=100ms
P
W
=1s
0.01
2
4
Qg (nC)
Figure 11. Gate Charge
6
8
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
DMJ70H1D4SV3
Document number: DS39417 Rev. 3 - 2
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April 2017
© Diodes Incorporated
DMJ70H1D4SV3
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.9
D=0.7
D=0.1
D=0.05
D=0.02
NEW PRODUCT
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.8℃/W
Duty Cycle, D = t1 / t2
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO251 (Type HE1)
E
L2
b3
L3
0
c
TO251 (Type HE1)
Dim
Min Max Typ
A
2.20 2.40 2.30
A2
0.97 1.17 1.07
b
0.68 0.90 0.78
b3
5.20 5.50 5.33
c
0.43 0.63 0.53
D
5.98 6.22 6.10
D1
5.30 REF
e
2.286 BSC
E
6.40 6.80 6.60
E1
4.63 5.03 4.83
H
10.00 11.44 11.22
k
0.40REF
L
3.90 4.30 4.10
L1
0.85 1.25 1.05
L2
0.88 1.28 1.02
L3
0.75 REF
Q
1.65 1.95 1.80
PØ
1.20
θ
5°
9°
7°
θ1
5°
9°
7°
All Dimensions in mm
E1
Q
P
D
0
0
L1
b
A2
L
H
D1
e
01
k
A
DMJ70H1D4SV3
Document number: DS39417 Rev. 3 - 2
5 of 6
www.diodes.com
April 2017
© Diodes Incorporated
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