DMT2004UFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BV
DSS
R
DS(ON)
max
5.0mΩ @ V
GS
= 10V
24V
6.5mΩ @ V
GS
= 4.5V
10.0mΩ @ V
GS
= 2.5V
I
D
max
T
C
= +25°
C
70A
60A
45A
Features and Benefits
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% Unclamped Inductive Switch (UIS) Test in Production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8
S
S
Pin 1
S
G
D
1
2
3
8
7
6
5
G
S
D
D
D
D
4
Bottom View
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT2004UFG-7
DMT2004UFG-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
SF2 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
SF2
PowerDI is a registered trademark of Diodes Incorporated.
DMT2004UFG
Document number: DS38956 Rev. 1 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMT2004UFG
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
Steady
State
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
24
±12
70
55
90
2.5
26
36
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.2
106
Units
W
°
C/W
W
°
C/W
°
C/W
°
C
3.5
-55 to +150
Electrical Characteristics
(T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (T
J
= +25°
C)
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
24
—
—
0.55
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.7
4.5
7.5
0.65
1683
581
559
1.6
29.6
53.7
4.2
13.4
3.9
9.6
30.8
38.6
11.2
22.9
Max
—
1
±100
1.45
5.0
6.5
10.0
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 2.5V, I
D
= 12A
V
GS
= 0V, I
S
= 2A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= 15V, I
D
= 9A
pF
Ω
nC
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 3Ω, I
D
= 9A
ns
nC
I
F
= 1.5A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMT2004UFG
Document number: DS38956 Rev. 1 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMT2004UFG
30.0
V
GS
= 2.0V
25.0
I
D
, DRAIN CURRENT (A)
20
18
16
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
14
12
10
8
6
4
2
T
J
= -55℃
T
J
= 125℃
T
J
= 150℃
T
J
= 85℃
T
J
= 25℃
20.0
15.0
V
GS
= 4.5V
V
GS
= 10.0V
10.0
V
GS
= 1.5V
V
GS
= 1.2V
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
5.0
0
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 2.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.01
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
I
D
= 12A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
6
8 10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
2
4
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
V
GS
= 10V
T
J
= 125℃
T
J
= 150℃
R
DS(ON
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.8
1.6
V
GS
= 4.5V, I
D
= 12A
1.4
1.2
V
GS
= 2.5V, I
D
= 12A
1
0.8
0.6
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
-25
PowerDI is a registered trademark of Diodes Incorporated.
DMT2004UFG
Document number: DS38956 Rev. 1 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMT2004UFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.012
1.2
1
I
D
= 1mA
0.01
V
GS
= 2.5V, I
D
= 12A
0.8
0.008
0.6
I
D
= 250μA
0.006
0.4
0.004
V
GS
= 4.5V, I
D
= 12A
0.2
0.002
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.Junction
Temperature
20
C
T
, JUNCTION CAPACITANCE (pF)
18
16
I
S
, SOURCE CURRENT (A)
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.2
T
J
= -55℃
T
J
= 125℃
T
J
= 25℃
T
J
= 150℃
T
J
= 85℃
V
GS
= 0V
10000
f = 1MHz
C
iss
C
oss
1000
C
rss
100
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
20
10
100
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
0.1
T
J(Max)
= 150℃
P
W
= 10ms
T
C
= 25℃
Single Pulse
P
W
= 1ms
DUT on 1*MRP Board
P
W
=100µs
V
GS
= 10V
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
V
GS
(V)
6
V
DS
= 15V, I
D
= 9A
4
2
0
0
10
30
40
Qg (nC)
Figure 11. Gate Charge
20
50
60
0.01
PowerDI is a registered trademark of Diodes Incorporated.
DMT2004UFG
Document number: DS38956 Rev. 1 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMT2004UFG
1
D=0.9
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 103℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
PowerDI is a registered trademark of Diodes Incorporated.
DMT2004UFG
Document number: DS38956 Rev. 1 - 2
5 of 7
www.diodes.com
July 2016
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
