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IMD2AT110

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

IMD2AT110 Overview

General purpose (dual digital transistors)

IMD2AT110 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G6
JESD-609 codee1
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
EMD2 / UMD2N / IMD2A
Transistors
General purpose
(dual digital transistors)
EMD2 / UMD2N / IMD2A
Features
1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT6 or UMT6 or SMT6
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMD2
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D2
(6)
1.25
2.1
0.15
0.65
(1)
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
(4)
0.65
1.3
(3)
UMD2N
0.2
0.5
0.5 0.5
1.0
1.6
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
2.0
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “−” sign on DTr
2
values for the PNP
type have been omitted.
(5)
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D2
Equivalent circuit
EMD2 / UMD2N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=22kΩ
R
2
=22kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
IMD2A
0.3
IMD2A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=22kΩ
R
2
=22kΩ
(1)
(6)
(4)
(5)
1.6
2.8
0.15
0.3to0.6
0to0.1
(6)
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
40
−10
30
100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
˚C
˚C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D2
Output current
EMD2, UMD2N
Power
dissipation IMD2A
Junction temperature
Storage temperature
mA
mW
1
2
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(2)
Rev.A
1/3
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