EMD2 / UMD2N / IMD2A
Transistors
General purpose
(dual digital transistors)
EMD2 / UMD2N / IMD2A
Features
1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT6 or UMT6 or SMT6
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMD2
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D2
(6)
1.25
2.1
0.15
0.65
(1)
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
(4)
0.65
1.3
(3)
UMD2N
0.2
0.5
0.5 0.5
1.0
1.6
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
2.0
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “−” sign on DTr
2
values for the PNP
type have been omitted.
(5)
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D2
Equivalent circuit
EMD2 / UMD2N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=22kΩ
R
2
=22kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
IMD2A
0.3
IMD2A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=22kΩ
R
2
=22kΩ
(1)
(6)
(4)
(5)
1.6
2.8
0.15
0.3to0.6
0to0.1
(6)
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
40
−10
30
100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
˚C
˚C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D2
Output current
EMD2, UMD2N
Power
dissipation IMD2A
Junction temperature
Storage temperature
mA
mW
∗
1
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(2)
Rev.A
1/3
EMD2 / UMD2N / IMD2A
Transistors
1
500m
l
O
/l
I
=20
OUTPUT VOLTAGE : V
O (on)
(V)
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
Ta=100˚C
25˚C
−40˚C
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
DTr
2
(PNP)
−100
−50
V
O
=−0.3V
−10m
V
CC
=−5V
−5m
1k
500
DC CURRENT GAIN : G
I
V
O
=−5V
Ta=100˚C
25˚C
−40˚C
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : Io
(A)
−20
−10
−5
−2
−1
Ta=−40˚C
25˚C
100˚C
−2m
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
Ta=100˚C
25˚C
−40˚C
200
100
50
20
10
5
2
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
−0.5
−1
−1.5
−2
−2.5
−3
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.5 Input voltage vs. output current
(ON characteristics)
Fig.6 Output current vs. input voltage
(OFF characteristics)
Fig.7 DC current gain vs. output
current
−1
−500m
l
O
/l
I
=20
Ta=100˚C
25˚C
−40˚C
OUTPUT VOLTAGE : V
O (on)
(V)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I
O
(A)
Fig.8 Output voltage vs. output
current
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1