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2N6322

Description
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 30A I(C) | TO-3
CategoryDiscrete semiconductor    The transistor   
File Size86KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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2N6322 Overview

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 30A I(C) | TO-3

2N6322 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)30 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
Base Number Matches1

2N6322 Related Products

2N6322 2N6324
Description TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 30A I(C) | TO-3 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 30A I(C) | TO-210AE
Reach Compliance Code unknow compli
Maximum collector current (IC) 30 A 30 A
Configuration Single Single
Minimum DC current gain (hFE) 40 40
Maximum operating temperature 200 °C 200 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 200 W 200 W
surface mount NO NO
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1
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