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BUK7E11-55B

Description
TRENCHMOS-TM STANDARD LEVEL FET
CategoryDiscrete semiconductor    The transistor   
File Size104KB,16 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK7E11-55B Overview

TRENCHMOS-TM STANDARD LEVEL FET

BUK7E11-55B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)157 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
Rev. 02 — 11 November 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s
Very low on-state resistance
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V and 24 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
173 mJ
s
I
D
75 A
s
R
DSon
= 9.9 mΩ (typ)
s
P
tot
157 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
g
s
[1]
Simplified outline
mb
mb
mb
Symbol
d
MBB076
2
MBK106
1
3
MBK116
1 2 3
MBK112
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
SOT226 (I
2
-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.

BUK7E11-55B Related Products

BUK7E11-55B BUK7511-55B
Description TRENCHMOS-TM STANDARD LEVEL FET TRENCHMOS-TM STANDARD LEVEL FET
Is it Rohs certified? incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 75 A 75 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 157 W 157 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
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