P4KE Series
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-204AL (DO-41 Plastic)
ded ge
ten Ran
Ex e
Features
ltag
Vo
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 440V
Peak Pulse Power
400W
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 400W peak pulse power capabililty on 10/1000µs wave-
form, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Mechanical Data
0.205 (5.2)
0.160 (4.1)
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265°C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440
(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
T
J
, T
STG
Limit
400
See Next Table
1.0
40
3.5/5.0
60
100
–55 to +175
Unit
W
A
W
A
V
°C/W
°C/W
°C
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current wih a 10/1000µs waveform
(1)
Steady state power dissipation
at T
L
= 75°C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms
single half sine-wave unidirectional only
(3)
Maximum instantaneous forward voltage
at 25A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typ. thermal resistance junction-to-ambient, L
Lead
= 10mm
Operating junction and storage temperature range
Notes:
(1)
(2)
(3)
(4)
Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
V
F
= 3.5V for P4KE220(A) & below; V
F
= 5.0V for P4KE250(A) & above
Document Number 88365
08-Jul-03
www.vishay.com
1
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
-- Peak Pulse Power (kW)
100
Fig. 2 – Pulse Derating Curve
100
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage, %
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
75
10
50
1
25
0.1
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
25
50
75
100
125
150
175
200
td -- Pulse Width (sec.)
T
A
-- Ambient Temperature (°C)
Fig. 3 -- Pulse Waveform
150
Fig. 4 – Typ. Junction Capacitance Uni-Directional
10,000
I
PPM
-- Peak Pulse Current,
% I
RSM
100
Peak Value
I
PPM
Half Value – I
PPM
2
C
J
-- Junction Capacitance
tr = 10µsec.
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at Zero Bias
1,000
50
10/1000µsec. Waveform
as defined by R.E.A.
td
100
Measured at
Stand-Off
Voltage, V
WM
0
0
1.0
2.0
3.0
4.0
10
1.0
t -- Time (ms)
V
(BR)
-- Breakdown Voltage (V)
10
100
200
Fig. 5 – Steady State Power Derating Curve
PM
(AV)
, Steady State Power
Dissipation (W)
1.00
L = 0.375" (9.5mm)
Lead Lengths
0.75
60 HZ Resistive or
Inductive Load
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
200
I
FSM
-- Peak Forward
Surge Current (A)
100
50
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
0
25
50
75
100
125
150
175
200
1
5
10
50
100
T
L
-- Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 7 – Typical Reverse Leakage Characteristics
Transient Thermal Impedance
(°C/W)
100
Fig. 8 – Typ. Transient Thermal Impedance
100
I
D
-- Instantaneous Reverse
Leakage Current (µA)
10
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25°C
1
10
0.1
0.01
0
100
200
300
400
500
600
1
0.001
0.01
0.1
1
10
100
1000
V
(BR)
-- Breakdown Voltage (V)
www.vishay.com
4
t
p
-- Pulse Duration (sec)
Document Number 88365
08-Jul-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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