JAN2N6212 datasheet, PDF - EEWORLD Datasheet

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JAN2N6212: DescriptionPower Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JAN2N6212 Overview

Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

JAN2N6212 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1439170931
Parts packaging code	TO-66
package instruction	TO-66, 2 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Qualified
Guideline	MIL-19500/461E
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/461

Devices

2N6211

2N6212

2N6213

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation

Symbol 2N6211 2N6212 2N6213 Unit

V

CEO

V

CBO

V

EBO

I

B

I

C

225

275

300

350

400

6.0

1.0

2.0

3.0

35

-55 to +200

Max.

5.0

Vdc

Adc

W

0

C

Unit

C/W

@ T

A

= +25

0

C

(1)

P

T

@ T

C

= +25

0

C

(2)

Operating & Storage Temperature

T

op

,

T

stg

TO-66*

(TO-213AA)

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance Junction-to-Case

1) Derate linearly 17.1 mW/

0

C for T

A

> +25

0

C

2)

Derate linearly 200 mW/

0

C for T

C

> +25

0

C

Symbol

R

θ

JC

0

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz

2N6211

2N6212

2N6213

2N6211

2N6212

2N6213

V

(BR)

CEO

225

300

350

250

325

375

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50

Ω

V

(BR)

CER

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50

Ω,

V

BE

= -1.5 Vdc

2N6211

2N6212

2N6213

V

(BR)

CEX

275

350

400

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JAN2N6212 Related Products

	JAN2N6212	JAN2N6211	JAN2N6213	CCT-38SX3C-RS	JANTX2N6213	JANTX2N6211
Description	Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Normally Open Coaxial Switch	Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	incompatible
Objectid	1439170931	1439170919	2078541134	-	2078571944	2078571928
Parts packaging code	TO-66	TO-66	TO-66	-	TO-66	TO-66
package instruction	TO-66, 2 PIN	TO-66, 2 PIN	TO-66, 2 PIN	-	TO-66, 2 PIN	TO-66, 2 PIN
Contacts	3	3	3	-	3	3
Reach Compliance Code	unknown	not_compliant	unknown	-	unknown	not_compliant
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	-	2 A	2 A
Collector-emitter maximum voltage	300 V	225 V	350 V	-	350 V	225 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10	10	-	10	10
JEDEC-95 code	TO-66	TO-66	TO-66	-	TO-66	TO-66
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	-	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	-	e0	e0
Number of components	1	1	1	-	1	1
Number of terminals	2	2	2	-	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	-	200 °C	200 °C
Package body material	METAL	METAL	METAL	-	METAL	METAL
Package shape	ROUND	ROUND	ROUND	-	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	-	PNP	PNP
Certification status	Qualified	Qualified	Not Qualified	-	Not Qualified	Qualified
Guideline	MIL-19500/461E	MIL-19500/461E	MIL-19500/461E	-	MIL-19500/461E	MIL-19500/461E
surface mount	NO	NO	NO	-	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	-	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	-	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON

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