JANTX2N6213 datasheet, PDF - EEWORLD Datasheet

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JANTX2N6213: DescriptionPower Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTX2N6213 Overview

Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

JANTX2N6213 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	2078571944
Parts packaging code	TO-66
package instruction	TO-66, 2 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
Guideline	MIL-19500/461E
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/461

Devices

2N6211

2N6212

2N6213

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation

Symbol 2N6211 2N6212 2N6213 Unit

V

CEO

V

CBO

V

EBO

I

B

I

C

225

275

300

350

400

6.0

1.0

2.0

3.0

35

-55 to +200

Max.

5.0

Vdc

Adc

W

0

C

Unit

C/W

@ T

A

= +25

0

C

(1)

P

T

@ T

C

= +25

0

C

(2)

Operating & Storage Temperature

T

op

,

T

stg

TO-66*

(TO-213AA)

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance Junction-to-Case

1) Derate linearly 17.1 mW/

0

C for T

A

> +25

0

C

2)

Derate linearly 200 mW/

0

C for T

C

> +25

0

C

Symbol

R

θ

JC

0

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz

2N6211

2N6212

2N6213

2N6211

2N6212

2N6213

V

(BR)

CEO

225

300

350

250

325

375

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50

Ω

V

(BR)

CER

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50

Ω,

V

BE

= -1.5 Vdc

2N6211

2N6212

2N6213

V

(BR)

CEX

275

350

400

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANTX2N6213 Related Products

	JANTX2N6213	JAN2N6211	JAN2N6212	JAN2N6213	CCT-38SX3C-RS	JANTX2N6211
Description	Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Normally Open Coaxial Switch	Power Bipolar Transistor, 2A I(C), 225V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	incompatible
Objectid	2078571944	1439170919	1439170931	2078541134	-	2078571928
Parts packaging code	TO-66	TO-66	TO-66	TO-66	-	TO-66
package instruction	TO-66, 2 PIN	TO-66, 2 PIN	TO-66, 2 PIN	TO-66, 2 PIN	-	TO-66, 2 PIN
Contacts	3	3	3	3	-	3
Reach Compliance Code	unknown	not_compliant	unknown	unknown	-	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	2 A	-	2 A
Collector-emitter maximum voltage	350 V	225 V	300 V	350 V	-	225 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	10	10	10	10	-	10
JEDEC-95 code	TO-66	TO-66	TO-66	TO-66	-	TO-66
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	-	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0	-	e0
Number of components	1	1	1	1	-	1
Number of terminals	2	2	2	2	-	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	-	200 °C
Package body material	METAL	METAL	METAL	METAL	-	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	-	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	-	PNP
Certification status	Not Qualified	Qualified	Qualified	Not Qualified	-	Qualified
Guideline	MIL-19500/461E	MIL-19500/461E	MIL-19500/461E	MIL-19500/461E	-	MIL-19500/461E
surface mount	NO	NO	NO	NO	-	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	-	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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