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P12NK60Z

Description
10 A, 600 V, 0.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size268KB,12 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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P12NK60Z Overview

10 A, 600 V, 0.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

P12NK60Z Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionTO-220FP, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current10 A
Rated avalanche energy260 mJ
Maximum drain on-resistance0.6400 ohm
Maximum leakage current pulse40 A
STP12NK60Z
STF12NK60Z
N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP
Zener-Protected SuperMESH™MOSFET
Table 1: General Features
TYPE
STP12NK60Z
STF12NK60Z
Figure 1: Package
I
D
10 A
10 A
Pw
150 W
35 W
V
DSS
600 V
600 V
R
DS(on)
< 0.64
< 0.64
TYPICAL R
DS
(on) = 0.53
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
1
2
TO-220
TO-220FP
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
Table 2: Order Codes
SALES TYPE
STP12NK60Z
STF12NK60Z
MARKING
P12NK60Z
F12NK60Z
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Rev. 3
September 2005
1/12

P12NK60Z Related Products

P12NK60Z F12NK60Z
Description 10 A, 600 V, 0.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 10 A, 600 V, 0.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3
Minimum breakdown voltage 600 V 600 V
Processing package description TO-220FP, 3 PIN TO-220FP, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection isolation isolation
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply
Maximum leakage current 10 A 10 A
Rated avalanche energy 260 mJ 260 mJ
Maximum drain on-resistance 0.6400 ohm 0.6400 ohm
Maximum leakage current pulse 40 A 40 A
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