SS275TA12205, SS275TC12205, SS275TI12205
Silicon Carbide Schottky Diode
Part Number
SS275TA12205
SS275TC12205
SS275TI12205
V
RRM
(V)
1200
1200
1200
I
F(AVG)
(A)
5
5
5
Configuration
Triple Common Anode
Triple Common Cathode
Triple Independent
Triple Independent (TI)
V
RRM
C
J
= 1200 V
5A
65 pF
=
I
F(AVG)
=
Triple Anode (TA)
Triple Cathode (TC)
A = Anode C = Cathode
Features
Symbol Parameter
V
RRM
V
RSM
V
DC
I
F(AVG)
I
FRM
T
VJ
T
STG
P
TOT
Symbol
Repetitive Peak Reverse Voltage
Repetitive Surge Reverse Voltage
DC Blocking Voltage
Average Forward Current
Test Conditions
Maximum Ratings
1200
1200
1200
V
V
V
A
A
°C
°C
W
T
J
= 175
°
C
5
12
-55 to +175
-55 to +175
30
•
•
•
•
•
•
•
•
•
•
•
1200 V SiC Schottky Diode
Surface Mount Package
Zero Reverse Recovery
Zero Forward Recovery
High Frequency Operation
Temperature Independent Behavior
Positive Temperature Coefficient for V
F
Repetitive Peak Forward Surge Current T
VJ
= 45
°
C, t
P
= 8 ms
Half Sine Wave D = 0.3
Operating Virtual Junction Temperature
Storage Temperature
T
C
= 25 °C (10 W/device)
Applications
MHz Switch Mode Power Supplies
High Frequency Converters
Resonant Converters
Rectifier Circuits
Parameter
Test Conditions
Characteristic Values
Typ.
Max.
1.8
3
200
1000
T
J
= 25°C unless otherwise specified
Units
V
V
F
I
R
C
J
Forward Voltage
I
F
= 5 A, T
J
= 25
°
C
T
J
= 175
°
C
V
R
= 1200 V, T
J
= 25
°
C
T
J
= 175
°
C
f = 1 MHz,
V
R
= 0 V
V
R
= 200 V
V
R
= 1200 V
1.6
2.6
50
100
450
85
65
5
Reverse Current
µA
Junction Capacitance
pF
°C/W
°C
V
RMS
g
R
THJC
T
L
Isolation
Weight
Thermal Resistance
Lead Soldering Temperature
Pin to Substrate
Pin to Pin
1.6 mm (0.063 in) from case for 10 s
300
>2000
>1700
2
SS275TA12205, SS275TC12205, SS275TI12205
Fig. 1
6
Forward Voltage vs. Current
Fig. 2
5E-10
4.5E-10
4E-10
3.5E-10
3E-10
2.5E-10
2E-10
1.5E-10
1E-10
5E-11
0
0
Capacitance vs. Reverse Voltage
Forward Current (A)
5
4
3
2
1
0
Capacitance (F)
0
0.5
1
1.5
2
200
400
600
800
1000
1200
Forward Voltage (V)
Fig. 3
10
V
R
(V)
Fig. 4
1.4
1.2
Leakage Current vs. Reverse Voltage
Forward Votage vs. Temperature
I
F
= 5 A
Leakage Current (µA)
1
1
Normalized
0.8
0.6
0.4
0.2
0.1
0.01
0.001
0
200
400
600
800
1000
1200
0
-50
Reverse Voltage (V)
Fig. 5
3.5
3
Leakage Current (µA)
2.5
2
1.5
1
0.5
0
-50
0
50
100
0
50
Temperature (°C)
100
Leakage Current vs. Temperature
V
R
everse
= 1000 V
Temperature (°C)
SS275TA12205, SS275TC12205, SS275TI12205
Fig. 6 Package Diagram
Top View
A1
C1
End View
A2
C2
A3
C3
Bottom View
Side View
© 2013 IXYS RF
An
IXYS
Company
1609 Oakridge Dr., Suite 100
Fort Collins, CO USA 80525
970-493-1901 Fax: 970-232-3025
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
DCB – Direct Copper Bond under Nickel plate on an Aluminum Nitride substrate, electrically isolated from any pin.
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