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UPA2690T1R-E2-AX

Description
Nch/Pch Dual Power Mosfet 20V 4.0A 42Mohm 6Pinhuson2020, HUSON, /Embossed Tape
CategoryDiscrete semiconductor    The transistor   
File Size310KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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Nch/Pch Dual Power Mosfet 20V 4.0A 42Mohm 6Pinhuson2020, HUSON, /Embossed Tape

UPA2690T1R-E2-AX Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1296656883
Parts packaging codeHUSON
package instruction,
Contacts6
Manufacturer packaging codePWSN0006JD-A6
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionGeneral Purpose Power MOSFETs Nch/Pch Dual Power MOSFET 20V 4.0A 42mohm 6pinHUSON2020
Samacsys ManufacturerRenesas Electronics
Samacsys Modified On2022-04-28 13:17:55
ConfigurationSINGLE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.062 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee4
Number of components1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2.3 W
surface mountYES
Terminal surfaceNICKEL PALLADIUM GOLD
Data Sheet
μ
PA2690T1R
COMPLEMENTARY MOSFET
20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ
Description
The
μ
PA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
R07DS1000EJ0101
Rev.1.01
Mar 04, 2013
Features
N-channel 2.5V, P-channel 1.8V drive available
Low on-state resistance
N-channel
R
DS (on)1
= 42 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
R
DS (on)2
= 62 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.0 A)
P-channel
R
DS (on)1
= 79 mΩ MAX. (V
GS
=
–4.5
V, I
D
=
–1.5
A)
R
DS (on)2
= 105 mΩ MAX. (V
GS
=
–2.5
V, I
D
=
–1.5
A)
R
DS (on)3
= 182 mΩ MAX. (V
GS
=
–1.8
V, I
D
=
–1.5
A)
Built-in gate protection diode
Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
1
6pinHUSON2020(Dual)
Note:
∗1.Pb-free
(This product does not contain Pb in the external electrode and other parts.)
μ
PA2690T1R-E2-AX
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
1
Total Power Dissipation (1 unit, 5 s)
Total Power Dissipation (2 units, 5 s)
2
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
STG
N-CHANNEL
20
±12
±4.0
±16
P-CHANNEL
–20
m10
m3.0
m12
Unit
V
V
A
A
W
W
°C
°C
Channel Temperature
Storage Temperature
Notes:
∗1.
PW≤10
μ
s, Duty Cycle≤1%
∗2.
Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
1.5
2.3
150
–55 to +150
Caution: This product (N-channel) is electrostatic-sensitive device due to low ESD capability and should
be handled with caution for electrostatic discharge.
V
ESD
=
±400V
MIN. ( C = 100pF, R = 1.5KΩ
)
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
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