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MA344

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

MA344 Overview

Silicon epitaxial planar type

MA344 Parametric

Parameter NameAttribute value
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSEPARATE, 3 ELEMENTS
Diode Capacitance Tolerance6.446%
Minimum diode capacitance ratio4.6
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G6
Number of components3
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Variable Capacitance Diodes
MA6X344
(MA344)
Silicon epitaxial planar type
For UHF and VHF electronic tuners
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
Unit : mm
0.16
+0.10
–0.06
2.8
+0.2
–0.3
Three isolated elements contained in one package
Large capacitance variation ratio
Small series resistance r
D
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
3
2
1
0.30
+0.10
–0.05
0.50
+0.10
–0.05
10°
1.1
+0.2
–0.1
(0.65)
s
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F
T
j
T
stg
Rating
30
34
20
150
−55
to
+150
Unit
V
V
mA
°C
°C
1: Cathode 1
2: Cathode 2
3: Cathode 3
0 to 0.1
1.1
+0.3
–0.1
4: Anode 3
5: Anode 2
6: Anode 1
Mini6-G1 Package
Marking Symbol: 5P
Internal Connection
6
5
4
1
2
3
s
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
I
R
C
D(3V)
C
D(25V)
C
D(10V)
C
D(17V)
Capacitance ratio
Capacitance difference
Diode capacitance deviation
Series resistance
*2
Conditions
V
R
= 30 V
V
R
= 3 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
V
R
= 17 V, f = 1 MHz
Min
Typ
Max
10
Unit
nA
pF
pF
pF
pF
pF
11.233
2.020
4.358
2.567
4.60
0.37
12.781
2.367
5.422
3.100
6.15
Note)
*1
C
D(3V)
/C
D(25V)
C
D(17V)
/C
D(25V)
∆C
r
D
C
D(3V)(10V)(17V)(25V)
C
D
= 9 pF, f = 470 MHz
%
0.55
0.75
Note) 1. Rated input/output frequency: 470 MHz
2. 2. Each characteristic is a standard for each diode.
3. *1 : Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank G.
*2 : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
306
0.4
±0.2
s
Features
1.50
+0.25
–0.05

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