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UPC3225TB-E3

Description
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size258KB,16 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
Download Datasheet Parametric View All

UPC3225TB-E3 Overview

RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

UPC3225TB-E3 Parametric

Parameter NameAttribute value
Maximum input power10 dBm
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionLEAD FREE, SUPER MINIMOLD-6
stateTransferred
Microwave RF TypeWIDE BAND LOW POWER
structureCOMPONENT
Gain22 dB
BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3225TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The
µ
PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz f
max
UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Wideband response
• Low current
• Medium output power
• High linearity
• Power gain
• Noise Figure
• Supply voltage
• Port impedance
: f
u
= 2.8 GHz TYP. @ 3 dB bandwidth
: I
CC
= 24.5 mA TYP.
: P
O (sat)
= +15.5 dBm TYP. @ f = 0.95GHz
: P
O (sat)
= +12.5 dBm TYP. @ f = 2.15 GHz
: P
O (1dB)
= +9.0 dBm TYP. @ f = 0.95 GHz
: P
O (1dB)
= +7.0 dBm TYP. @ f = 2.15 GHz
: G
P
= 32.5 dB TYP. @ f = 0.95 GHz
: G
P
= 33.5 dB TYP. @ f = 2.15 GHz
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
: V
CC
= 4.5 to 5.5 V
: input/output 50
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3M
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
µ
PC3225TB-E3
µ
PC3225TB-E3-A 6-pin super minimold
(Pb-Free)
Note
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3225TB.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
©
NEC Compound Semiconductor Devices, Ltd. 2004

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