GS81314PQ37GK-800I datasheet, PDF

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GS81314PQ37GK-800I: DescriptionSRAM 1.2/1.25V 4M x 36 144M; Categorystorage; File Size261KB，39 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

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GS81314PQ37GK-800I Overview

SRAM 1.2/1.25V 4M x 36 144M

GS81314PQ37GK-800I Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	GSI Technology
Product Category	SRAM
RoHS	Details
Memory Size	144 Mbit
Organization	4 M x 36
Maximum Clock Frequency	800 MHz
Interface Type	Parallel
Supply Voltage - Max	1.35 V
Supply Voltage - Min	1.15 V
Supply Current - Max	2.7 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 100 C
Mounting Style	SMD/SMT
Package / Case	BGA-260
Packaging	Tray
Memory Type	QDR-IV
Type	SigmaQuad-IVe B2
Moisture Sensitive	Yes
Factory Pack Quantity	10

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GS81314PQ19/37GK-933/800

260-Pin BGA

Com & Ind Temp

POD I/O

Features

•

4Mb x 36 and 8Mb x 18 organizations available

Organized as a single logical memory bank

933 MHz maximum operating frequency

1.866 BT/s peak transaction rate (in billions per second)

134 Gb/s peak data bandwidth (in x36 devices)

Separate I/O DDR Data Buses

Non-multiplexed DDR Address Bus

Two operations - Read and Write - per clock cycle

No address/bank restrictions on Read and Write ops

Burst of 2 Read and Write operations

5 cycle Read Latency

On-chip ECC with virtually zero SER

Loopback signal timing training capability

1.2V ~ 1.3V nominal core voltage

1.2V ~ 1.3V POD I/O interface

Configuration registers

Configurable ODT (on-die termination)

ZQ pin for programmable driver impedance

ZT pin for programmable ODT impedance

IEEE 1149.1 JTAG-compliant Boundary Scan

260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS-

compliant BGA package

144Mb SigmaQuad-IVe™

Burst of 2 Single-Bank ECCRAM™

Clocking and Addressing Schemes

Up to 933 MHz

1.2V ~ 1.3V V

DDQ

The GS81314PQ19/37GK SigmaQuad-IVe ECCRAMs are

synchronous devices. They employ three pairs of positive and

negative input clocks; one pair of master clocks, CK and CK,

and two pairs of write data clocks, KD[1:0] and KD[1:0]. All

six input clocks are single-ended; that is, each is received by a

dedicated input buffer.

CK and CK are used to latch address and control inputs, and to

control all output timing. KD[1:0] and KD[1:0] are used solely

to latch data inputs.

Each internal read and write operation in a SigmaQuad-IVe B2

ECCRAM is two times wider than the device I/O bus. An input

data bus de-multiplexer is used to accumulate incoming data

before it is simultaneously written to the memory array. An

output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore, the address

field of a SigmaQuad-IVe B2 ECCRAM is always one address

pin less than the advertised index depth (e.g. the 8M x 18 has

4M addressable index).

On-Chip Error Correction Code

GSI's ECCRAMs implement an ECC algorithm that detects

and corrects all single-bit memory errors, including those

induced by SER events such as cosmic rays, alpha particles,

etc. The resulting Soft Error Rate of these devices is

anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude

improvement over comparable SRAMs with no on-chip ECC,

which typically have an SER of 200 FITs/Mb or more.

All quoted SER values are at sea level in New York City.

SigmaQuad-IVe™ Family Overview

SigmaQuad-IVe ECCRAMs are the Separate I/O half of the

SigmaQuad-IVe/SigmaDDR-IVe family of high performance

ECCRAMs. Although similar to GSI's third generation of

networking SRAMs (the SigmaQuad-IIIe/SigmaDDR-IIIe

family), these fourth generation devices offer several new

features that help enable significantly higher performance.

Parameter Synopsis

Speed Grade

-933

-800

Max Operating Frequency

933 MHz

800 MHz

Read Latency

5 cycles

1.25V to 1.35V

1.15V to 1.35V

Rev: 1.02 3/2016

1/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS81314PQ37GK-800I Related Products

	GS81314PQ37GK-800I	GS81314PQ19GK-933	GS81314PQ19GK-800	GS81314PQ19GK-933I	GS81314PQ19GK-800I	GS81314PQ37GK-800	GS81314PQ37GK-933I	GS81314PQ37GK-933
Description	SRAM 1.2/1.25V 4M x 36 144M	SRAM 1.2/1.25V 8M x 18 144M	SRAM 1.2/1.25V 8M x 18 144M	SRAM 1.2/1.25V 8M x 18 144M	Static random access memory 1.2/1.25V 8M x 18 144M	Static random access memory 1.2/1.25V 4M x 36 144M	Static random access memory 1.2/1.25V 4M x 36 144M	Static random access memory 1.2/1.25V 4M x 36 144M
Maker	-	GSI Technology	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
organize	-	8MX18	-	8MX18	8 M x 18	4 M x 36	4MX36	4MX36

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