74LCX16541
LOW VOLTAGE CMOS 16-BIT BUS BUFFER (3-STATE)
WITH 5V TOLERANT INPUTS/OUTPUTS (NON INVERTED)
s
s
s
s
s
s
s
s
s
s
s
5V TOLERANT INPUTS AND OUTPUTS
HIGH SPEED:
t
PD
= 4.1 ns (MAX.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
AND OUPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.5V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16541
IMPROVED LATCH-UP IMMUNITY
ESD PERFORMANCE:
HBM>2000V(MIL STD 883 method 3015);
MM>200V
TSSOP
ORDER CODES
PACKAGE
TSSOP
TUBE
T&R
74LCX16541TTR
PIN CONNECTION
DESCRIPTION
The 74LCX16541 is an advanced high-speed
CMOS 16-BIT BUS BUFFER (3-STATE) fabricat-
ed with sub-micron silicon gate and double-layer
metal wiring C
2
MOS tecnology.
This is composed of two 8-bit sections with
separate output-enable signals. For either 8-bit
buffers section, the 3 STATE control gate
operates as a two input AND such that if either
nG1 and nG2 are high, all outputs are in the high
impedence state. This device is designed to be
used with 3 state memory address driveres, etc.
It hase same speed performance at 3.3V than 5V
AC/ACT family, combined with a lower power con-
sumption.
All inputs and outputs are equipped with protec-
tion circuits against static discharge, giving them
2KV ESD immunity and transient excess voltage.
February 2003
1/9
74LCX16541
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Output Voltage (High or Low State) (note 1)
DC Input Diode Current
DC Output Diode Current (note 2)
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to Vcc+0.5
−50
−
50
+
50
±
100
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) Io absolute maximum rating must be observed
2)Vo < GND
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
T
op
I
OH,
I
OL
I
OH,
I
OL
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage (OFF State)
Output Voltage (High or Low State)
Operating Temperature
High or Low Level Output Current (Vcc = 3.0 to 3.6V)
High or Low Level Output Current (Vcc = 2.7V)
Input Rise and Fall Time (note 2)
Parameter
Value
2 to 3.6
0 to 5.5
0 to 5.5
0 to Vcc
-55 to 125
±
24
±
12
0 to 10
Unit
V
V
V
V
°C
mA
mA
ns/V
1) Truth Table guaranteed: 1.5V to 3.6V
2) V
IN
from0.8V to 2V at V
CC
=3.0V
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74LCX16541
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
3.3
2.5
3.3
2.5
3.3
V
I
= 0V or V
CC
V
I
= 0V or V
CC
f
IN
= 10MHz
V
I
= 0V or V
CC
f
IN
= 10MHz
V
I
= 0V or V
CC
Value
T
A
= 25 °C
Min.
Typ.
4
10
45
50
3
4
Max.
pF
pF
pF
pF
Unit
C
IN
C
OUT
C
PD
Input Capacitance
Output Capacitance
Power Dissipation Capacitance
(note 1) Output enabled
Power Dissipation Capacitance
(note 1) Output disabled
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/ 16
TEST CIRCUIT
TEST
t
PLH
, t
PHL
t
PZL
, t
PLZ
t
PZH
, t
PHZ
C
L
= 50 pF or equivalent (includes jig and probe capacitance)
R
L
= R1 = 500
Ω
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
SWITCH
Open
2V
CC
GND
5/9
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