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an AMP
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company
Wireless Bipolar Power Transistor,
850 - 960 MHz
Features
Designed for Linear Amplifier Applications
Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP
Class A: +53dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
35W
PH081 o-35
.100*.010
(2.54t.25)
I
t
.230
c5.?4)
Absolute‘ Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES f.005
,.HILuNETERS
tlsnn,
Typical Optimum Device Impedances
F(MHz)
600
650
900
q#4
1 .O + j3.7
1.9 + j4.3
1.3
j4.0
ZOAim
2.1 + j0.9
1.6+jO.4j0.7
1.6 +
i.i”Tw
- 2LOA
960
3.0 + j2.7
1.7 + jO.1
ZIN
Specifications
Subject
to Change
Without
Notice.
Wireless Bipolar Power Transistor, 35W
PH0810-35
v2.00
Typical Broadband Performance
Curves
OUTPUT
75
GAIN-EFFICIENCY
l5 6
14
vs FREQUENCY
mA
POWER
vs COLLECTOR
VOLTAGE
Po,,=35 W Vcc=24 V I,,=200
1,,=200 mA F=900 MHz
11
P,,r0.75 w
_
10 1 * -
850
900
' 25
960
72
14
16
18
20
22
24
26
FREQUENCY (MHz)
COLLECTOR VOLTAGE (V)
GAIN vs POWER OUTPUT
F=900 MHz V,,=24
V
60 ,
C,, vs COLLECTOR
F=l.OMHz
VOLTAGE
I
24
27
30
33
36
39
42
45
48
5
10
15
v,, W)
20
25
30
P,, Wm)
IMD vs PoUT
Vcc=24 V I,,=200
mA F1=900 MHz F2=900.1 MHz
Claaa A6
9
-15 r
IMD vs P,,
Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1
Clam
A
MHz
6
ii
z
3
6
B
2
3
0
24
28
32
36
40
44
48
24
26
32
36
40
44
48
0
P&PEP)
in dBm
P&PEP)
in dBm
Wireless Bipolar Power Transistor,
35W
PH0810-35
v2.00
RF Test Fixture
“B
P
CR1
Cl
iii.
c2
740
247
-
(*)
431
1,241
ARTWORK
DIMENSIONS
IN MILS
PAR-l-S
Cl c2
C5
C6
CR1
Ll L2
c3
c4
LIST
100
pF ATC SIZE B
5000 pF
50 UF 50 VOLTS
lN4245
DIODE
lOT/Nll,
20
AWG ON
l/8’
DIAMETER
PH0810-35
5 OHMS l/4 WATT
lOT/ND, 22 AWG ON 3.1 OHM l/4 WATT
ROGERS
6010,5 ,025' THICK, ER = 1085
Ql
Rl
RLl
BOARD
TYPE
Specifications Subject to Change Wiiout
Notice.
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EEWORLD
