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AS4C14400

Description
1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)
File Size391KB,16 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
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AS4C14400 Overview

1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)

High Performance
1M×4
CMOS DRAM
AS4C14400
AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary information
Features
• Organization: 1,048,576 words × 4 bits
• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• Single 5V power supply
• ESD protection
2001V
• Latch-up current
200 mA
Pin arrangement
SOJ
I/O0
I/O1
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
GND
I/O3
I/O2
CAS
OE
I/O0
I/O1
WE
RAS
A9
1
2
3
4
5
Pin designation
TSOP
26
25
24
23
22
GND
I/O3
I/O2
CAS
OE
Pin(s)
A0 to A9
RAS
I/O0 to I/O3
OE
CAS
WE
V
CC
GND
Description
Address inputs
Row address strobe
Input/output
Output enable
Column address strobe
Read/write control
Power (5.0
±
0.5V)
Ground
A0
A1
A2
A3
V
CC
9
10
11
12
13
18
17
16
15
14
A8
A7
A6
A5
A4
A0
A1
A2
A3
V
CC
9
10
11
12
13
18
17
16
15
14
A8
A7
A6
A5
A4
Selection guide
Symbol
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
Shaded areas contain advance information.
4C14400-40
40
20
10
10
70
30
90
1.0
4C14400-50
50
25
13
13
90
35
80
1.0
4C14400-60
60
30
15
15
110
40
70
1.0
4C14400-70
70
35
18
18
130
45
60
1.0
Unit
ns
ns
ns
ns
ns
ns
mA
mA
t
RAC
t
CAA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC5
ALLIANCE SEMICONDUCTOR

AS4C14400 Related Products

AS4C14400 AS4C14405 AS4C14400-40JC AS4C14400-50JC AS4C14400-60JC AS4C14400-60TC
Description 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO) 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO) 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO) 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO) 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO) 1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)
Is it Rohs certified? - - incompatible incompatible incompatible incompatible
Maker - - ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation]
Parts packaging code - - SOJ SOJ SOJ TSOP
package instruction - - SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 SOP, TSOP20/26(UNSPEC)
Contacts - - 20 20 20 20
Reach Compliance Code - - unknow unknow unknow unknow
ECCN code - - EAR99 EAR99 EAR99 EAR99
access mode - - FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time - - 40 ns 50 ns 60 ns 60 ns
Other features - - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type - - COMMON COMMON COMMON COMMON
JESD-30 code - - R-PDSO-J20 R-PDSO-J20 R-PDSO-J20 R-PDSO-G20
JESD-609 code - - e0 e0 e0 e0
memory density - - 4194304 bi 4194304 bi 4194304 bi 4194304 bi
Memory IC Type - - FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width - - 4 4 4 4
Number of functions - - 1 1 1 1
Number of ports - - 1 1 1 1
Number of terminals - - 20 20 20 20
word count - - 1048576 words 1048576 words 1048576 words 1048576 words
character code - - 1000000 1000000 1000000 1000000
Operating mode - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - - 70 °C 70 °C 70 °C 70 °C
organize - - 1MX4 1MX4 1MX4 1MX4
Output characteristics - - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - - SOJ SOJ SOJ SOP
Encapsulate equivalent code - - SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34 TSOP20/26(UNSPEC)
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - 225 225 225 240
power supply - - 5 V 5 V 5 V 5 V
Certification status - - Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle - - 1024 1024 1024 1024
self refresh - - NO NO NO NO
Maximum standby current - - 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate - - 0.09 mA 0.08 mA 0.07 mA 0.07 mA
Maximum supply voltage (Vsup) - - 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) - - 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) - - 5 V 5 V 5 V 5 V
surface mount - - YES YES YES YES
technology - - CMOS CMOS CMOS CMOS
Temperature level - - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - - J BEND J BEND J BEND GULL WING
Terminal location - - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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