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C122F1G

Description
8A, 50V, SCR, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size96KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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C122F1G Overview

8A, 50V, SCR, TO-220AB

C122F1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code221A-07
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionANODE
Nominal circuit commutation break time50 µs
ConfigurationSINGLE
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current60 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current0.5 mA
On-state non-repetitive peak current90 A
Number of components1
Number of terminals3
Maximum on-state current8000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current8 A
Off-state repetitive peak voltage50 V
Repeated peak reverse voltage50 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Trigger device typeSCR
C122F1G
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
http://onsemi.com
Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 50 Volts
This is a Pb−Free Device*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
J
= 25 to 100°C, Sine Wave,
50 to 60 Hz; Gate Open)
On-State RMS Current
(180° Conduction Angles; T
C
= 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
C
= 75°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width = 10
ms,
T
C
= 70°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 70°C)
Forward Peak Gate Current
(Pulse Width = 10
ms,
T
C
= 70°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
Value
50
Unit
V
SCRs
8 AMPERES RMS
50 VOLTS
G
A
K
MARKING
DIAGRAM
4
8.0
90
A
A
1
2
3
TO−220AB
CASE 221A
STYLE 3
A YW
C122F1G
AKA
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
34
5.0
0.5
2.0
−40
to +125
−40
to +150
A
2
s
W
W
A
°C
°C
A
Y
W
C122F1
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
C122F1G
Package
TO220AB
(Pb−Free)
Shipping
500 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
May, 2011
Rev. 4
1
Publication Order Number:
C122F1/D

C122F1G Related Products

C122F1G C122B1G C122B1
Description 8A, 50V, SCR, TO-220AB 8 A, 200 V, SCR, TO-220AB 8 A, 200 V, SCR, TO-220AB
Is it Rohs certified? conform to conform to incompatible
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Manufacturer packaging code 221A-07 CASE 221A-07 CASE 221A-07
Reach Compliance Code _compli compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Shell connection ANODE ANODE ANODE
Nominal circuit commutation break time 50 µs 50 µs 50 µs
Configuration SINGLE SINGLE SINGLE
Maximum DC gate trigger current 25 mA 25 mA 25 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 60 mA 60 mA 30 mA
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
On-state non-repetitive peak current 90 A 90 A 90 A
Number of components 1 1 1
Number of terminals 3 3 3
Maximum on-state current 8000 A 8000 A 8000 A
Maximum operating temperature 125 °C 125 °C 100 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 8 A 8 A 8 A
Off-state repetitive peak voltage 50 V 200 V 200 V
Repeated peak reverse voltage 50 V 50 V 200 V
surface mount NO NO NO
Terminal surface Tin (Sn) MATTE TIN Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED
Trigger device type SCR SCR SCR
Is it lead-free? Lead free Lead free -
Base Number Matches - 1 1
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