Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.8
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage (Note 2)
(I
TM
= 16 A Peak, T
C
= 25°C)
Gate Trigger Current (Continuous dc)
(V
AK
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 V, R
L
= 100
W)
Gate Non−Trigger Voltage (Continuous dc)
(V
AK
= 12 V, R
L
= 100
W,
T
C
= 125°C)
Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA, Gate Open) T
C
= 25°C
T
C
=
−40°C
Turn-Of f Time (V
D
= Rated V
DRM
)
(I
TM
= 8 A, I
R
= 8 A)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, Gate Open, T
C
= 100°C)
2. Pulse Test: Pulse Width
≤
1 ms, Duty Cycle
≤
2%.
dv/dt
−
50
−
V/ms
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
V
TM
I
GT
−
−
1.83
V
mA
−
−
−
−
0.2
−
−
−
−
−
25
40
V
1.5
2.0
−
V
mA
−
−
−
−
−
50
30
60
−
ms
T
C
= 25°C
T
C
= 125°C
I
DRM
, I
RRM
−
−
−
−
10
0.5
mA
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
GD
I
H
t
q
http://onsemi.com
2
C122F1G
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
100
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
100
95
90
85
80
75
70
65
60
0
1
2
3
4
5
CONDUCTION
ANGLE = 60°
RESISTIVE OR
INDUCTIVE LOAD.
50 TO 400 Hz
120°
180°
0
CONDUCTION CONDUCTION
ANGLE
ANGLE
90
360
ONE CYCLE OF SUPPLY
FREQUENCY
80
DC
CONDUCTION
ANGLE = 30°
60° 90°
120°
180°
0
CONDUCTION
ANGLE
360
240°
360°
70
60
0
1
2
3
4
5
6
7
8
I
T(AV)
, AVERAGE ON-STATE FORWARD CURRENT (AMPERES)
6
7
8
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPERES)
Figure 1. Current Derating (Half−Wave)
P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS)
TC , AVERAGE ON-STATE POWER DISSIPATION (WATTS)
Figure 2. Current Derating (Full−Wave)
14
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPERES)
CONDUCTION
ANGLE 30°
60°
90°
180°
120°
DC
10
240°
8
120°
6
CONDUCTION
ANGLE = 60°
180°
360°
4
0
CONDUCTION CONDUCTION
ANGLE
ANGLE
360
ONE CYCLE OF SUPPLY
FREQUENCY
2
0
0
1
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
2
3
4
5
6
7
8
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPERES)
Figure 3. Maximum Power Dissipation
(Half−Wave)
Figure 4. Maximum Power Dissipation
(Full−Wave)
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3
C122F1G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
C
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
H
Z
L
V
G
4
A
U
K
1 2 3
R
J
D
N
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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