DSEP 29-03A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 30 A
V
RRM
= 300 V
t
rr
= 30 ns
TO-220 AC
V
RSM
V
300
V
RRM
V
300
Type
DSEP 29-03A
A = Anode, C = Cathode, TAB = Cathode
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
= 145°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
35
30
300
1.2
A
A
A
ne
w
r
0.5
30
-55...+175
175
-55...+150
165
T
C
= 25°C
mounting torque
typical
0.4...0.6
2
Symbol
I
R
①
Conditions
V
R
= V
RRM
;
I
F
= 30 A;
fo
Characteristic Values
typ.
max.
10
1
0.93
1.26
0.9
µA
mA
V
V
K/W
K/W
ns
7
A
t
T
VJ
= 25°C
T
VJ
= 150°C
V
F
②
R
thJC
R
thCH
t
rr
I
RM
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0%
②
Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
No
T
VJ
= 150°C
T
VJ
= 25°C
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
de
s
mJ
0.3
A
°C
°C
°C
W
Nm
g
Recommended replacement:
DPG30I300PA
ig
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
-
Power dissipation within the
diode
-
Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
n
20080317a
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
517
DSEP 29-03A
60
A
I
F
40
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
20
Q
r
800
T
VJ
= 100°C
nC
600
I
F
= 60A
I
F
= 30A
400
I
F
= 15A
V
R
= 150V
I
RM
30
A
25
20
15
10
T
VJ
= 100°C
V
R
= 150V
I
F
= 60A
I
F
= 30A
I
F
= 15A
200
5
0
0.0
0
100
0
0.5
Fig. 1 Forward current I
F
versus V
F
1.4
ig
14
V
V
FR
t
fr
12
10
8
0
200
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
T
VJ
= 100°C
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
T
VJ
= 100°C
I
F
= 30A
1.2
µs
1.0
0.8
V
FR
0.6
0.4
0.2
0.0
600 A/µs 1000
800
di
F
/dt
t
fr
1.2
K
f
1.0
I
RM
t
rr
80
70
0.8
Q
r
0.6
60
50
0
40
80
120 °C 160
T
VJ
r
0.4
40
ne
w
0
200
400
600
-di
F
/dt
de
s
V
R
= 150V
I
F
= 60A
I
F
= 30A
I
F
= 15A
800
A/µs 1000
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
0.1
Z
thJC
0.01
fo
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.502
0.193
0.205
t
i
(s)
0.005
0.0003
0.016
0.001
No
t
0.0001
0.00001
DSEP 29-03A
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
517
© 2005 IXYS All rights reserved
n
1.0
V
F
V
1.5
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
400
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2
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