STC08DE150HP
Hybrid emitter switched bipolar transistor
ESBT 1500V - 8A - 0.075
Preliminary Data
General features
Table 1.
V
CS(ON)
0.6V
■
■
■
■
■
General features
I
C
8A
R
CS(ON)
0.075Ω
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1500 V
Very low C
ISS
driven by R
G
= 47
Ω
In compliance with the 2002/93/EC European
Directive
TO247-4L HP
Description
The STC08DE150HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed at
providing the best performance in ESBT topology.
The STC08DE150HP is designed for use in aux
flyback smps for any three phase application.
Internal schematic diagrams
Applications
■
Single switch SMPS based on three phase
mains
Order codes
Part Number
STC08DE150HP
Marking
C08DE150HP
Package
TO247-4L HP
Packing
Tube
October 2006
Rev 1
1/11
www.st.com
11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
®
STC08DE150HP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC08DE150HP
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
GS
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-source voltage (V
BS
=V
GS
=0V)
Base-source voltage (I
C
=0, V
GS
=0V)
Source-base voltage (I
C
=0, V
GS
=0V)
Gate-source voltage
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 1ms)
Total dissipation at T
c
≤
25°C
Storage temperature
Max. operating junction temperature
Value
1500
30
9
Unit
V
V
V
V
A
A
A
A
W
°C
°C
±
20
8
15
4
8
42
-40 to 150
125
Table 3.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
max
Value
2.4
Unit
°C/W
3/11
Electrical characteristics
STC08DE150HP
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CS(SS)
I
BS(OS)
I
SB(OS)
I
GS(OS)
V
CS(ON)
Electrical characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
100
10
100
500
I
B
=1.6A
I
B
=0.5A
V
GS
=10V
V
GS
=10V
4.5
8
0.6
0.6
7.5
10
1.5
1
1.5
2.2
750
2
V
V
V
pF
1.4
Unit
µA
µA
µA
nA
V
V
Collector-source
=1500V
V
current (V
BS
=V
GS
=0V)
CS(SS)
Base-source current
(I
C
=0, V
GS
=0V)
Source-base current
(I
C
=0, V
GS
=0V)
Gate-source leakage
(V
BS
=0V)
Collector-source ON
voltage
DC current gain
Base-source ON
voltage
Gate threshold voltage
Input capacitance
V
BS(OS)
=30V
V
SB(OS)
=9V
V
GS
=
±
20V
V
GS
=10V
V
GS
=10V
I
C
=8A
I
C
=5A
I
C
=8A
I
C
=5A
h
FE
V
BS(ON)
V
GS(th)
C
iss
Q
GS(tot)
V
CS
=1V
V
CS
=1V
V
GS
=10V
V
GS
=10V
V
BS
=V
GS
V
CS
=25V
V
GS
=10V
V
CS
=25V
V
GS
=10V
I
C
=8A I
B
=1.6A
I
C
=5A I
B
=0.5A
I
B
=250µA
f =1MHz
3
V
GS
=V
CB
=0V
I
C
=8A
V
CB
=0V
R
G
=47Ω
t
p
=4µs
I
B
=0.5A
R
G
=47Ω
t
p
=4µs
I
B
=1A
h
FE
=5
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Maximum collector-
source voltage
switched without
snubber
12.5
nC
t
s
t
f
t
s
t
f
V
Clamp
=1200V
I
C
=5A
V
GS
=10V
V
Clamp
=1200V
I
C
=5A
R
G
=47Ω
I
C
= 8A
526
8.5
ns
ns
884
16
ns
ns
V
CSW
1500
V
4/11
STC08DE150HP
Table 4.
Symbol
Electrical characteristics
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(500ns)
Test Conditions
V
CC
=V
Clamp
=300V
V
GS
=10V
I
B
= 0.8A
R
G
=47Ω
V
GS
=10V
I
B
= 0.8A
R
G
=47Ω
I
C
= 4A
t
peak
=500ns
I
Bpeak
= 8A (2I
C
)
I
C
= 4A
t
peak
=500ns
I
Bpeak
= 8A (2I
C
)
6
V
Min.
Typ.
Max.
Unit
V
CS(dyn)
V
CS(dyn)
Collector-source
dynamic voltage
(1µs)
V
CC
=V
Clamp
=300V
2.2
V
Note (1) Pulsed duration = 300
µs,
duty cycle
≤1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Dynamic collector-emitter
saturation voltage
Figure 3.
DC current gain
Figure 4.
Gate threshold voltage vs
temperature
5/11
京公网安备 11010802033920号
EEWORLD
