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BZW06-128B

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size41KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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BZW06-128B Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW06-128B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
BZW06-5V8B SERIES
V
BR
: 6.8 - 440 Volts
P
PK
: 600 Watts
FEATURES :
* 600W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min)
* Typical I
R
less then 1µA above 10V
* Pb / RoHS Free
BIDIRECTIONAL TRANSIENT
SUPPRESSOR
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
DEVICES FOR BIPOLAR APPLICATIONS
For uni-directional without B suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power for 1 msec. Exponential Pulse
Steady State Power Dissipation ( L=10mm )
Storage Temperature Range
Symbol
P
PP
P
D
T
STG
Value
Minimum 600
5.0
- 65 to + 175
Unit
Watt
Watt
°C
Notes :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°C
per Fig. 1
(2) Mounted on Copper Leaf area of 1.57 in
2
(40mm
2
).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
Page 1 of 4
Rev. 04 : August 29, 2005
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