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BZV55B15

Description
15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BZV55B15 Overview

15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZV55B15 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.5 W
Nominal reference voltage15 V
surface mountYES
Maximum voltage tolerance2%
Working test current5 mA
BZV55B Series
V
Z
:
2.4 to 75V
P
D
:
500mW
FEATURES :
• Silicon planar zener diodes
• For use as low voltage stabilizer or voltage reference.
• Standard zener voltage tolerance is
±
2%
• Pb / RoHS Free
ZENER DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
MECHANICAL DATA :
* Case : MiniMELF Glass Case (SOD-80C)
* Weight : 0.05 gram (approximately)
0.049 (1.25)Min.
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current see Table "Characteristics"
Maximum Forward Voltage at I
F
= 10 mA.
Power Dissipation at Tflange = 50°C
Power Dissipation at Ta = 50°C
Continuous Forward Current
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Lead
Peak reverse power dissipation (non-repetitive) tp = 100µs
Junction temperature
Storage temperature range
V
F
P
D
P
D
I
F
R
θ
JA
R
θJL
P
ZSM
T
J
T
S
0.9
500
400
1)
250
0.38
(1)
0.3
30
(2)
-65 to + 200
-65 to + 200
V
mW
mW
mA
°C/mW
°C/mW
W
°C
°C
Symbol
Value
Unit
Notes: (1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm
(2) Tj = 150
°
C
Page 1 of 2
Rev. 02 : March 25, 2005
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